Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI634GPBF IRFI634GPBF

Description
Manufacturer: Vishay Win Source Part Number: 017607-IRFI634GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 770pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 3.4A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017607-IRFI634GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 770pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 3.4A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI634GPBF - 017607-IRFI634GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI634GPBF
017607-IRFI634GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI634GPBF 017607-IRFI634GPBF
Manufacturer: Vishay Win Source Part Number: 017607-IRFI634GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 770pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 3.4A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017607-IRFI634GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 770pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 450 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
N-Channel 250V 5.6A TO-220 MOSFET Transistor
2088-IRFI634GPBF
N-Channel 250V 5.6A TO-220 MOSFET Transistor 2088-IRFI634GPBF
N-Channel MOSFET, 250V, 5.6A, 450mR, TO-220 Product overview: IRFI634GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V, 5.6A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 5.6A, TO-220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFI634GPBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 250V, 5.6A, 450mR, TO-220 Product overview: IRFI634GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V, 5.6A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 5.6A, TO-220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFI634GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFI634GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI634GPBF-ND
Single FETs, MOSFETs IRFI634GPBF-ND
N-Channel 250V 5.6A (Tc) 35W (Tc) Through Hole TO-220-3

N-Channel 250V 5.6A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI634GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI634GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI634GPBF
MOSFET N-CH 250V 5.6A TO220-3

MOSFET N-CH 250V 5.6A TO220-3

Supplier's Site
N Channel Mosfet, 250V, 5.6A, To-220Fp; Channel Type Vishay - 63J6770 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 250V, 5.6A, To-220Fp; Channel Type Vishay
63J6770
N Channel Mosfet, 250V, 5.6A, To-220Fp; Channel Type Vishay 63J6770
N CHANNEL MOSFET, 250V, 5.6A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:5.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 250V, 5.6A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:5.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 250V HEXFET MOSFET

MOSFET N-CH 250V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017607-IRFI634GPBF 2088-IRFI634GPBF IRFI634GPBF-ND IRFI634GPBF 63J6770 IRFI634GPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI634GPBF N-Channel 250V 5.6A TO-220 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 250V, 5.6A, To-220Fp; Channel Type Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 250 volts
PD 35000 milliwatts 35000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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