Manufacturer: Vishay
Win Source Part Number: 017607-IRFI634GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 770pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 450 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
N-Channel 250V 5.6A (Tc) 35W (Tc) Through Hole TO-220-3
N CHANNEL MOSFET, 250V, 5.6A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:5.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 250V 5.6A TO220-3
| Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017607-IRFI634GPBF | IRFI634GPBF-ND | 63J6770 | IRFI634GPBF | IRFI634GPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI634GPBF | Single FETs, MOSFETs | N Channel Mosfet, 250V, 5.6A, To-220Fp; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 250 volts | ||||
| PD | 35000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
