Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFI614GPBF

Description
N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFI614GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI614GPBF-ND
Single FETs, MOSFETs IRFI614GPBF-ND
N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-220-3

N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-220-3

Buy Now Datasheet
FETs - Single - IRFI614GPBF - 1187645-IRFI614GPBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFI614GPBF
1187645-IRFI614GPBF
FETs - Single - IRFI614GPBF 1187645-IRFI614GPBF
Manufacturer: Vishay Siliconix Win Source Part Number: 1187645-IRFI614GPBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 23W Alternative Parts (Cross-Reference): FQPF4N25; IRFI614G; RCX050N25; Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 2.1A Rds On (Maximum) at Id, Vgs: 2Ohm at 1.3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187645-IRFI614GPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 23W
Alternative Parts (Cross-Reference): FQPF4N25; IRFI614G; RCX050N25;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 250V
Id - Continuous Drain Current: 2.1A
Rds On (Maximum) at Id, Vgs: 2Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI614GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI614GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI614GPBF
MOSFET N-CH 250V 2.1A TO220-3

MOSFET N-CH 250V 2.1A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 250V HEXFET MOSFET

MOSFET N-CH 250V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFI614GPBF-ND 1187645-IRFI614GPBF IRFI614GPBF IRFI614GPBF
Product Name Single FETs, MOSFETs FETs - Single - IRFI614GPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3 TO-220; TO-220-3 Full Pack, Isolated Tab
V(BR)DSS 250 volts
QG 8.2 nC
Unlock Full Specs
to access all available technical data