Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFI614G

Description
N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFI614G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI614G-ND
Single FETs, MOSFETs IRFI614G-ND
N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-220-3

N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-220-3

Buy Now Datasheet
FETs - Single - IRFI614G - 1187644-IRFI614G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFI614G
1187644-IRFI614G
FETs - Single - IRFI614G 1187644-IRFI614G
Manufacturer: Vishay Siliconix Win Source Part Number: 1187644-IRFI614G Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 23W Alternative Parts (Cross-Reference): FQPF4N25; IRFI614GPBF; IRFI614G; RCX050N25; Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 2.1A Rds On (Maximum) at Id, Vgs: 2Ohm at 1.3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187644-IRFI614G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 23W
Alternative Parts (Cross-Reference): FQPF4N25; IRFI614GPBF; IRFI614G; RCX050N25;
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 250V
Id - Continuous Drain Current: 2.1A
Rds On (Maximum) at Id, Vgs: 2Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V

Buy Now
Singapore
250V 2.1A TO220 MOSFET Transistor
278-IRFI614G
250V 2.1A TO220 MOSFET Transistor 278-IRFI614G
MOSFET N-CH 250V 2.1A TO220-3 Product overview: IRFI614G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 2.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 2.1A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI614G can be used for catalog matching and distributor lookup.

MOSFET N-CH 250V 2.1A TO220-3 Product overview: IRFI614G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 2.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 2.1A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI614G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI614G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI614G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI614G
MOSFET N-CH 250V 2.1A TO220-3

MOSFET N-CH 250V 2.1A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFI614G-ND 1187644-IRFI614G 278-IRFI614G IRFI614G
Product Name Single FETs, MOSFETs FETs - Single - IRFI614G 250V 2.1A TO220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3 Tube TO-220; TO-220-3 Full Pack, Isolated Tab
V(BR)DSS 250 volts
QG 8.2 nC
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