Vishay Intertechnology, Inc. 250V 2.1A TO220 MOSFET Transistor IRFI614G

MOSFET N-CH 250V 2.1A TO220-3 Product overview: IRFI614G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 2.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 2.1A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI614G can be used for catalog matching and distributor lookup.

N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-220-3

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187644-IRFI614G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 23W
Alternative Parts (Cross-Reference): FQPF4N25; IRFI614GPBF; IRFI614G; RCX050N25;
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 250V
Id - Continuous Drain Current: 2.1A
Rds On (Maximum) at Id, Vgs: 2Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V