Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFI530G

Description
N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFI530G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI530G-ND
Single FETs, MOSFETs IRFI530G-ND
N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3

N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
100V 9.7A TO220 MOSFET Transistor
278-IRFI530G
100V 9.7A TO220 MOSFET Transistor 278-IRFI530G
MOSFET N-CH 100V 9.7A TO220-3 Product overview: IRFI530G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 9.7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 9.7A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI530G can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 9.7A TO220-3 Product overview: IRFI530G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 9.7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 9.7A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI530G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FETs - Single - IRFI530G - 1187640-IRFI530G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFI530G
1187640-IRFI530G
FETs - Single - IRFI530G 1187640-IRFI530G
Manufacturer: Vishay Siliconix Win Source Part Number: 1187640-IRFI530G Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 42W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 9.7A Rds On (Maximum) at Id, Vgs: 160mOhm at 5.8A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 33nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 670pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187640-IRFI530G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 42W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 9.7A
Rds On (Maximum) at Id, Vgs: 160mOhm at 5.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 33nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 670pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI530G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI530G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI530G
MOSFET N-CH 100V 9.7A TO220-3

MOSFET N-CH 100V 9.7A TO220-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number IRFI530G-ND 278-IRFI530G 1187640-IRFI530G IRFI530G
Product Name Single FETs, MOSFETs 100V 9.7A TO220 MOSFET Transistor FETs - Single - IRFI530G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab Tube TO-220; SOT3 TO-220; TO-220-3 Full Pack, Isolated Tab
PD 42000 milliwatts 42000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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