Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFI530G

Description
N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFI530G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI530G-ND
Single FETs, MOSFETs IRFI530G-ND
N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3

N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3

Buy Now Datasheet
FETs - Single - IRFI530G - 1187640-IRFI530G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFI530G
1187640-IRFI530G
FETs - Single - IRFI530G 1187640-IRFI530G
Manufacturer: Vishay Siliconix Win Source Part Number: 1187640-IRFI530G Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 42W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 9.7A Rds On (Maximum) at Id, Vgs: 160mOhm at 5.8A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 33nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 670pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187640-IRFI530G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 42W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 9.7A
Rds On (Maximum) at Id, Vgs: 160mOhm at 5.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 33nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 670pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI530G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI530G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI530G
MOSFET N-CH 100V 9.7A TO220-3

MOSFET N-CH 100V 9.7A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number IRFI530G-ND 1187640-IRFI530G IRFI530G
Product Name Single FETs, MOSFETs FETs - Single - IRFI530G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3 TO-220; TO-220-3 Full Pack, Isolated Tab
V(BR)DSS 100 volts
QG 33 nC
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