P-Channel MOSFET, 200V, 560mA, 1.5R Rds(on), DIP Product overview: IRFD9220PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 200V, 560mA, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 560mA, DIP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD9220PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 714562-IRFD9220PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 4-DIP
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 100
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 560mA
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 340mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 15nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 340pF at 25V
P-Channel 200V 560mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
P CHANNEL MOSFET, -200V, 560mA HD-1; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:560mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET P-CH 200V 560MA 4DIP
MOSFET P-CH -200V HEXFET MOSFET
P CHANNEL MOSFET, -200V, 560MA HD-1, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:200V, CONTINUOUS DRAIN CURRENT ID:560MA, ON RESISTANCE RDS(ON):1.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFD9220PBF | 714562-IRFD9220PBF | IRFD9220PBF-ND | 19K8168 | IRFD9220PBF | IRFD9220PBF | 16347017 |
| Product Name | P-Channel 200V 560mA DIP MOSFET Transistor | FETs - Single - IRFD9220PBF | Single FETs, MOSFETs | P Channel Mosfet, -200V, 560Ma Hd-1; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| PD | 1000 milliwatts | 1000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 200 volts |
