Vishay Precision Group Single FETs, MOSFETs IRFD9210PBF

P-Channel 200V 400mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

P channel ;VBRDSS -200 V; RDSon 3000 m

P channel ;VBRDSS -200 V; RDSon 3000 m

P-Channel JFET, 200V, 0.4A ID, 3R RdsOn, DIP Product overview: IRFD9210PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 200V, 0.4A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 0.4A, DIP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD9210PBF can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 017594-IRFD9210PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 400mA (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.9nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 240mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited