Vishay Precision Group Single FETs, MOSFETs IRFD9110PBF

Description
P-Channel 100V 700mA (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
  • Single FETs, MOSFETs - IRFD9110PBF-ND - DigiKey
    DigiKey
  • Transistor - 16346997 - Radwell International
    Radwell International
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9110PBF - 069469-IRFD9110PBF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD9110PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • P Channel Mosfet, -100V, 700Ma Hd-1; Transistor Polarity Vishay - 19K8165 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, P Channel, 700 Ma, 100 V, 1.2 Ohm, -10 V, -4 V Rohs Compliant Vishay - 97K1994 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
P-Channel 100V 700mA (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFD9110PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD9110PBF-ND
Single FETs, MOSFETs IRFD9110PBF-ND
P-Channel 100V 700mA (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

P-Channel 100V 700mA (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5410749
MOSFETs 5410749
MOSFET P-Channel 100V 0.7A HVMDIP4

MOSFET P-Channel 100V 0.7A HVMDIP4

Supplier's Site
Transistor - 16346997 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16346997
Transistor 16346997
POWER MOSFET IC CHIP, P CHANNEL, 4 PIN, DRAIN VOLTAGE: 100V, CONTINUOUS DRAIN CURRENT: 700MA, SOURCE THRESHOLD VOLTAGE: 4V, TEST VOLTAGE: 10V, MAX OPERATING TEMP: 175 DEGREES C. FREE 2 YEAR RADWELL WARRANTY

POWER MOSFET IC CHIP, P CHANNEL, 4 PIN, DRAIN VOLTAGE: 100V, CONTINUOUS DRAIN CURRENT: 700MA, SOURCE THRESHOLD VOLTAGE: 4V, TEST VOLTAGE: 10V, MAX OPERATING TEMP: 175 DEGREES C. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9110PBF - 069469-IRFD9110PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9110PBF
069469-IRFD9110PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9110PBF 069469-IRFD9110PBF
Manufacturer: Vishay Win Source Part Number: 069469-IRFD9110PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 700mA (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.7nC @ 10V Max Input Capacitance: 200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 420mA, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 069469-IRFD9110PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 700mA (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.7nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 420mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD9110PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD9110PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD9110PBF
MOSFET P-CH 100V 700MA 4DIP

MOSFET P-CH 100V 700MA 4DIP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFD9110PBF
MOSFET IRFD9110PBF
MOSFET P-CH -100V HEXFET MOSFET

MOSFET P-CH -100V HEXFET MOSFET

Buy Now Datasheet
P Channel Mosfet, -100V, 700Ma Hd-1; Transistor Polarity Vishay - 19K8165 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -100V, 700Ma Hd-1; Transistor Polarity Vishay
19K8165
P Channel Mosfet, -100V, 700Ma Hd-1; Transistor Polarity Vishay 19K8165
P CHANNEL MOSFET, -100V, 700mA HD-1; Transistor Polarity:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:700mA; On Resistance Rds(on):1.2ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

P CHANNEL MOSFET, -100V, 700mA HD-1; Transistor Polarity:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:700mA; On Resistance Rds(on):1.2ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, P Channel, 700 Ma, 100 V, 1.2 Ohm, -10 V, -4 V Rohs Compliant Vishay - 97K1994 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 700 Ma, 100 V, 1.2 Ohm, -10 V, -4 V Rohs Compliant Vishay
97K1994
Mosfet Transistor, P Channel, 700 Ma, 100 V, 1.2 Ohm, -10 V, -4 V Rohs Compliant Vishay 97K1994
MOSFET Transistor, P Channel, 700 mA, 100 V, 1.2 ohm, -10 V, -4 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, 700 mA, 100 V, 1.2 ohm, -10 V, -4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey RS Components, Ltd. Radwell International Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFD9110PBF-ND 5410749 16346997 069469-IRFD9110PBF IRFD9110PBF IRFD9110PBF 19K8165 97K1994
Product Name Single FETs, MOSFETs MOSFETs Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9110PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P Channel Mosfet, -100V, 700Ma Hd-1; Transistor Polarity Vishay Mosfet Transistor, P Channel, 700 Ma, 100 V, 1.2 Ohm, -10 V, -4 V Rohs Compliant Vishay
Polarity P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type "4-DIP (0.300"", 7.62mm)" HVMDIP SOT3; 4-DIP, Hexdip, HVMDIP 4-DIP (0.300, 7.62mm) TO-3 TO-3
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts 100 volts
IDSS 700 milliamps 700 milliamps
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