Manufacturer: Vishay
Win Source Part Number: 069469-IRFD9110PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 700mA (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.7nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 420mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
P-Channel 100V 700mA (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
P-Channel MOSFET, 100V, 700mA, 1.2 Ohm, Through Hole Product overview: IRFD9110PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Through-Hole, 100V, 700mA, 1.2 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 100V, 700mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD9110PBF can be used for catalog matching and distributor lookup.
MOSFET P-CH 100V 700MA 4DIP
P CHANNEL MOSFET, -100V, 700mA HD-1; Transistor Polarity:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:700mA; On Resistance Rds(on):1.2ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET Transistor, P Channel, 700 mA, 100 V, 1.2 ohm, -10 V, -4 V RoHS Compliant: Yes
MOSFET P-CH -100V HEXFET MOSFET
POWER MOSFET IC CHIP, P CHANNEL, 4 PIN, DRAIN VOLTAGE: 100V, CONTINUOUS DRAIN CURRENT: 700MA, SOURCE THRESHOLD VOLTAGE: 4V, TEST VOLTAGE: 10V, MAX OPERATING TEMP: 175 DEGREES C. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 069469-IRFD9110PBF | IRFD9110PBF-ND | 278-IRFD9110PBF | IRFD9110PBF | 19K8165 | 97K1994 | IRFD9110PBF | 16346997 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9110PBF | Single FETs, MOSFETs | P-Channel Through-Hole 100V 700mA MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -100V, 700Ma Hd-1; Transistor Polarity Vishay | Mosfet Transistor, P Channel, 700 Ma, 100 V, 1.2 Ohm, -10 V, -4 V Rohs Compliant Vishay | MOSFET | Transistor |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 100 volts | |||||||
| PD | 1300 milliwatts | 1300 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
