Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFD9110

The IRFD9110 is a P-channel power MOSFET designed for high-voltage switching applications with a drain-source voltage rating of -100 V and a continuous drain current of -0.70 A at 25 °C. It is packaged in a 4-pin HVMDIP with dimensions of 7.87 to 8.38 mm in length and 7.62 to 10.79 mm in width, featuring dual drains for thermal dissipation up to 1 W. The device has a maximum on-resistance of 1.2 Ω at -10 V gate-source voltage, a total gate charge of 8.7 nC, and operates at junction temperatures up to 175 °C. It is rated for repetitive avalanche current of -0.7 A and single pulse avalanche energy of 140 mJ. The part meets RoHS compliance and is suitable for automatic insertion. The package supports stacking on 0.1 inch pin centers.