Vishay Precision Group Transistor IRFD9024PBF

Description
P CHANNEL MOSFET, -60V, 1.6A, HD-1, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:60V, CONTINUOUS DRAIN CURRENT ID:1.6A, ON RESISTANCE RDS(ON):0.28OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 16346993 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRFD9024PBF-ND - DigiKey
    DigiKey
  • FETs - Single - IRFD9024PBF - 1187572-IRFD9024PBF - Win Source Electronics
    Win Source Electronics
  • HVMDIP-4 MOSFETs ROHS - 17930-IRFD9024PBF - Utmel Electronic Limited
    Utmel Electronic Limited
  • P Channel Mosfet, -60V, 1.6A, Hd-1; Channel Type Vishay - 19K8164 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.28Ohm;ID -1.6A;HD-1;PD 1.3W;VGS +/-20V - 70078898 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD9024PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P CHANNEL MOSFET, -60V, 1.6A, HD-1, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:60V, CONTINUOUS DRAIN CURRENT ID:1.6A, ON RESISTANCE RDS(ON):0.28OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 16346993 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16346993
Transistor 16346993
P CHANNEL MOSFET, -60V, 1.6A, HD-1, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:60V, CONTINUOUS DRAIN CURRENT ID:1.6A, ON RESISTANCE RDS(ON):0.28OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

P CHANNEL MOSFET, -60V, 1.6A, HD-1, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:60V, CONTINUOUS DRAIN CURRENT ID:1.6A, ON RESISTANCE RDS(ON):0.28OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRFD9024PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD9024PBF-ND
Single FETs, MOSFETs IRFD9024PBF-ND
P-Channel 60V 1.6A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

P-Channel 60V 1.6A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

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FETs - Single - IRFD9024PBF - 1187572-IRFD9024PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFD9024PBF
1187572-IRFD9024PBF
FETs - Single - IRFD9024PBF 1187572-IRFD9024PBF
Manufacturer: Vishay Siliconix Win Source Part Number: 1187572-IRFD9024PBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 4-DIP, Hexdip, HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: 4-DIP Power Dissipation (Maximum): 1.3W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 1.6A Rds On (Maximum) at Id, Vgs: 280mOhm at 960mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 570pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187572-IRFD9024PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 4-DIP
Power Dissipation (Maximum): 1.3W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 1.6A
Rds On (Maximum) at Id, Vgs: 280mOhm at 960mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 570pF at 25V

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HVMDIP-4 MOSFETs ROHS - 17930-IRFD9024PBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
HVMDIP-4 MOSFETs ROHS
17930-IRFD9024PBF
HVMDIP-4 MOSFETs ROHS 17930-IRFD9024PBF
HVMDIP-4 MOSFETs ROHS

HVMDIP-4 MOSFETs ROHS

Supplier's Site
P Channel Mosfet, -60V, 1.6A, Hd-1; Channel Type Vishay - 19K8164 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -60V, 1.6A, Hd-1; Channel Type Vishay
19K8164
P Channel Mosfet, -60V, 1.6A, Hd-1; Channel Type Vishay 19K8164
P CHANNEL MOSFET, -60V, 1.6A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

P CHANNEL MOSFET, -60V, 1.6A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.28Ohm;ID -1.6A;HD-1;PD 1.3W;VGS +/-20V - 70078898 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.28Ohm;ID -1.6A;HD-1;PD 1.3W;VGS +/-20V
70078898
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.28Ohm;ID -1.6A;HD-1;PD 1.3W;VGS +/-20V 70078898
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.28Ohm;ID -1.6A;HD-1;PD 1.3W;VGS +/-20V

MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.28Ohm;ID -1.6A;HD-1;PD 1.3W;VGS +/-20V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD9024PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD9024PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD9024PBF
MOSFET P-CH 60V 1.6A 4DIP

MOSFET P-CH 60V 1.6A 4DIP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFD9024PBF
MOSFET IRFD9024PBF
MOSFET P-CH -60V HEXFET MOSFET HEXDI

MOSFET P-CH -60V HEXFET MOSFET HEXDI

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Technical Specifications

  Radwell International DigiKey Win Source Electronics Utmel Electronic Limited Newark, An Avnet Company Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 16346993 IRFD9024PBF-ND 1187572-IRFD9024PBF 17930-IRFD9024PBF 19K8164 70078898 IRFD9024PBF IRFD9024PBF
Product Name Transistor Single FETs, MOSFETs FETs - Single - IRFD9024PBF HVMDIP-4 MOSFETs ROHS P Channel Mosfet, -60V, 1.6A, Hd-1; Channel Type Vishay MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.28Ohm;ID -1.6A;HD-1;PD 1.3W;VGS +/-20V Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type "4-DIP (0.300"", 7.62mm)" SOT3 TO-3 HD-1 4-DIP (0.300, 7.62mm)
V(BR)DSS 60 volts -60 volts
QG 19 nC
PD 1300 milliwatts 1300 milliwatts
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