P-Channel 60V 1.6A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
P-Channel MOSFET, 60V, 1.6A, 280mR, Through Hole DIP Product overview: IRFD9024PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Through-Hole, 60V, 1.6A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 60V, 1.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD9024PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 1187572-IRFD9024PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 4-DIP
Power Dissipation (Maximum): 1.3W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 1.6A
Rds On (Maximum) at Id, Vgs: 280mOhm at 960mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 570pF at 25V
MOSFET P-CH 60V 1.6A 4DIP
MOSFET P-CH -60V HEXFET MOSFET HEXDI
P CHANNEL MOSFET, -60V, 1.6A, HD-1, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:60V, CONTINUOUS DRAIN CURRENT ID:1.6A, ON RESISTANCE RDS(ON):0.28OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
P CHANNEL MOSFET, -60V, 1.6A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.28Ohm;ID -1.6A;HD-1;PD 1.3W;VGS +/-20V
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | Newark, An Avnet Company | Utmel Electronic Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFD9024PBF-ND | 278-IRFD9024PBF | 1187572-IRFD9024PBF | IRFD9024PBF | IRFD9024PBF | 16346993 | 19K8164 | 17930-IRFD9024PBF | 70078898 |
| Product Name | Single FETs, MOSFETs | P-Channel Through-Hole 60V 1.6A MOSFET Transistor | FETs - Single - IRFD9024PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor | P Channel Mosfet, -60V, 1.6A, Hd-1; Channel Type Vishay | HVMDIP-4 MOSFETs ROHS | MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.28Ohm;ID -1.6A;HD-1;PD 1.3W;VGS +/-20V |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Package Type | "4-DIP (0.300"", 7.62mm)" | SOT3 | 4-DIP (0.300, 7.62mm) | TO-3 | HD-1 | ||||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||||
| V(BR)DSS | 60 volts | -60 volts |
