P-Channel 50V 1.1A (Tc) 1W (Tc) Through Hole 4-HVMDIP
Manufacturer: Vishay Siliconix
Win Source Part Number: 777052-IRFD9010PBF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 4-DIP (0.300", 7.62mm)
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Family Name: IRFD9010
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: 4-DIP, Hexdip, HVMDIP
Channel Type Type: P
Drain Source Voltage: 50V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 240pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1W (Tc)
Rds On (Maximum) @ Id, Vgs: 500 mOhm @ 580mA, 10V
Alternative Parts (Cross-Reference): RSF010P05TL; SiHFD9010-E3;
Introduction Date: March 04, 2008
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET, Power;P-Ch; 60V 1.100A HEXDIP
P CHANNEL MOSFET, -50V, 1.1A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.1A I(D), 50V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET ROHS COMPLIANT: YES
MOSFET RECOMMENDED ALT 844-IRFD9010
MOSFET P-CH 50V 1.1A 4DIP
| DigiKey | Win Source Electronics | Allied Electronics, Inc. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFD9010PBF-ND | 777052-IRFD9010PBF | 70078897 | 19K8161 | 90AJ4688 | IRFD9010PBF | IRFD9010PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9010PBF | MOSFET, Power;P-Ch; 60V 1.100A HEXDIP | P Channel Mosfet, -50V, 1.1A, Hd-1; Channel Type Vishay | Small Signal Field-Effect Transistor, 1.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor Fet Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | ||||
| Package Type | "4-DIP (0.300"", 7.62mm)" | SOT3 | TO-3 | TO-3 | 4-DIP (0.300, 7.62mm) | ||
| PD | 1000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) |
