Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFD310PBF

Description
N-Channel 400V 350mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
Request a Quote Datasheet
Description
N-Channel 400V 350mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFD310PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD310PBF-ND
Single FETs, MOSFETs IRFD310PBF-ND
N-Channel 400V 350mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

N-Channel 400V 350mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
FETs - Single - IRFD310PBF - 1187565-IRFD310PBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFD310PBF
1187565-IRFD310PBF
FETs - Single - IRFD310PBF 1187565-IRFD310PBF
Manufacturer: Vishay Siliconix Win Source Part Number: 1187565-IRFD310PBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 4-DIP, Hexdip, HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 4-DIP Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 350mA Rds On (Maximum) at Id, Vgs: 3.6Ohm at 210mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 170pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187565-IRFD310PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 4-DIP
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 400V
Id - Continuous Drain Current: 350mA
Rds On (Maximum) at Id, Vgs: 3.6Ohm at 210mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 170pF at 25V

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Singapore, Singapore
N-Channel 400V 350mA DIP MOSFET Transistor
278-IRFD310PBF
N-Channel 400V 350mA DIP MOSFET Transistor 278-IRFD310PBF
N-Channel JFET, 400V, 350mA, 3.6R, DIP Product overview: IRFD310PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 350mA, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 350mA, DIP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD310PBF can be used for catalog matching and distributor lookup.

N-Channel JFET, 400V, 350mA, 3.6R, DIP Product overview: IRFD310PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 350mA, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 350mA, DIP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD310PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD310PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD310PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD310PBF
MOSFET N-CH 400V 350MA 4DIP

MOSFET N-CH 400V 350MA 4DIP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 400V HEXFET MOSFET HEXDI

MOSFET N-CH 400V HEXFET MOSFET HEXDI

Buy Now Datasheet
Transistor - 16346961 - Radwell International
Willingboro, NJ, United States
Transistor
16346961
Transistor 16346961
PRICE/EA (MIN PURCH= 2500) - N CHANNEL MOSFET, 400V, 350MA, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:350MA; DRAIN SOURCE VOLTA. FREE 2 YEAR RADWELL WARRANTY

PRICE/EA (MIN PURCH= 2500) - N CHANNEL MOSFET, 400V, 350MA, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:350MA; DRAIN SOURCE VOLTA. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Radwell International
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFD310PBF-ND 1187565-IRFD310PBF 278-IRFD310PBF IRFD310PBF IRFD310PBF 16346961
Product Name Single FETs, MOSFETs FETs - Single - IRFD310PBF N-Channel 400V 350mA DIP MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Transistor
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type "4-DIP (0.300"", 7.62mm)" SOT3 4-DIP (0.300, 7.62mm)
V(BR)DSS 400 volts
QG 17 nC
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