Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD123PBF IRFD123PBF

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 777051-IRFD123PBF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: 4-DIP (0.300", 7.62mm) Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Family Name: IRFD123 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: 4-DIP, Hexdip, HVMDIP Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 360pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.3W (Ta) Rds On (Maximum) @ Id, Vgs: 270 mOhm @ 780mA, 10V Introduction Date: March 27, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD123PBF - 777051-IRFD123PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFD123PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD123PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 100V, 1.3A; Channel Type Vishay - 31K1939 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 777051-IRFD123PBF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: 4-DIP (0.300", 7.62mm) Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Family Name: IRFD123 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: 4-DIP, Hexdip, HVMDIP Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 360pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.3W (Ta) Rds On (Maximum) @ Id, Vgs: 270 mOhm @ 780mA, 10V Introduction Date: March 27, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD123PBF - 777051-IRFD123PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD123PBF
777051-IRFD123PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD123PBF 777051-IRFD123PBF
Manufacturer: Vishay Siliconix Win Source Part Number: 777051-IRFD123PBF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: 4-DIP (0.300", 7.62mm) Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Family Name: IRFD123 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: 4-DIP, Hexdip, HVMDIP Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 360pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.3W (Ta) Rds On (Maximum) @ Id, Vgs: 270 mOhm @ 780mA, 10V Introduction Date: March 27, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 777051-IRFD123PBF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: 4-DIP (0.300", 7.62mm)
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Family Name: IRFD123
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: 4-DIP, Hexdip, HVMDIP
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 360pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.3W (Ta)
Rds On (Maximum) @ Id, Vgs: 270 mOhm @ 780mA, 10V
Introduction Date: March 27, 2007
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFD123PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD123PBF-ND
Single FETs, MOSFETs IRFD123PBF-ND
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD123PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD123PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD123PBF
MOSFET N-CH 100V 1.3A 4DIP

MOSFET N-CH 100V 1.3A 4DIP

Supplier's Site
N Channel Mosfet, 100V, 1.3A; Channel Type Vishay - 31K1939 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 1.3A; Channel Type Vishay
31K1939
N Channel Mosfet, 100V, 1.3A; Channel Type Vishay 31K1939
N CHANNEL MOSFET, 100V, 1.3A; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Product Range:- RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 1.3A; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Product Range:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFD123PBF
MOSFET IRFD123PBF
MOSFET N-CH 100V HEXFET MOSFET HEXDI

MOSFET N-CH 100V HEXFET MOSFET HEXDI

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 777051-IRFD123PBF IRFD123PBF-ND IRFD123PBF 31K1939 IRFD123PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD123PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 100V, 1.3A; Channel Type Vishay MOSFET
PD 1300 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type SOT3 "4-DIP (0.300"", 7.62mm)" 4-DIP (0.300, 7.62mm) TO-3
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