MOSFET N-CH 100V 1.3A 4DIP
100V N-Channel MOSFET, 1.3A, 270mR, Through Hole DIP Product overview: IRFD120PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Through-Hole, 100V, 1.3A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 100V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD120PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 017590-IRFD120PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 270 mOhm @ 780mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
POWER MOSFET, N CHANNEL, 100 V, 1.3 A, 0.27 OHM, HVMDIP, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 100V, 1.3A, HVMDIP4; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
100V 1.3A 270mΩ@10V,780mA 1.3W 4V@250uA N Channel HVMDIP-4 MOSFETs ROHS
MOSFET N-CH 100V 1.3A 4DIP
MOSFET N-CH 100V HEXFET MOSFET HEXDI
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-20V;-55
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Radwell International | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFD120PBF | 278-IRFD120PBF | 017590-IRFD120PBF | IRFD120PBF-ND | 16346937 | 19K8154 | IRFD120PBF | IRFD120PBF | IRFD120PBF | 70078893 |
| Product Name | Single FETs, MOSFETs | N-Channel Through-Hole 100V 1.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD120PBF | Single FETs, MOSFETs | Transistor | N Channel Mosfet, 100V, 1.3A, Hvmdip4; Channel Type Vishay | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-20V;-55 |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||||
| IDSS | 1300 milliamps | 1300 milliamps | ||||||||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts |
