Vishay Precision Group Single FETs, MOSFETs IRFD120PBF

Description
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
  • Single FETs, MOSFETs - IRFD120PBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD120PBF - 017590-IRFD120PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFD120PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • N Channel Mosfet, 100V, 1.3A, Hvmdip4; Channel Type Vishay - 19K8154 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-20V;-55 - 70078893 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Transistor - 16346937 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD120PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFD120PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD120PBF-ND
Single FETs, MOSFETs IRFD120PBF-ND
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel Through-Hole 100V 1.3A MOSFET Transistor
278-IRFD120PBF
N-Channel Through-Hole 100V 1.3A MOSFET Transistor 278-IRFD120PBF
100V N-Channel MOSFET, 1.3A, 270mR, Through Hole DIP Product overview: IRFD120PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Through-Hole, 100V, 1.3A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 100V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD120PBF can be used for catalog matching and distributor lookup.

100V N-Channel MOSFET, 1.3A, 270mR, Through Hole DIP Product overview: IRFD120PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Through-Hole, 100V, 1.3A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 100V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD120PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD120PBF - 017590-IRFD120PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD120PBF
017590-IRFD120PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD120PBF 017590-IRFD120PBF
Manufacturer: Vishay Win Source Part Number: 017590-IRFD120PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 360pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 270 mOhm @ 780mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017590-IRFD120PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 270 mOhm @ 780mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFD120PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFD120PBF
Single FETs, MOSFETs IRFD120PBF
MOSFET N-CH 100V 1.3A 4DIP

MOSFET N-CH 100V 1.3A 4DIP

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRFD120PBF
Triode/MOS Tube/Transistor >> MOSFETs IRFD120PBF
100V 1.3A 270mΩ@10V,780mA 1.3W 4V@250uA N Channel HVMDIP-4 MOSFETs ROHS

100V 1.3A 270mΩ@10V,780mA 1.3W 4V@250uA N Channel HVMDIP-4 MOSFETs ROHS

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFD120PBF
MOSFET IRFD120PBF
MOSFET N-CH 100V HEXFET MOSFET HEXDI

MOSFET N-CH 100V HEXFET MOSFET HEXDI

Buy Now Datasheet
N Channel Mosfet, 100V, 1.3A, Hvmdip4; Channel Type Vishay - 19K8154 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 1.3A, Hvmdip4; Channel Type Vishay
19K8154
N Channel Mosfet, 100V, 1.3A, Hvmdip4; Channel Type Vishay 19K8154
N CHANNEL MOSFET, 100V, 1.3A, HVMDIP4; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 1.3A, HVMDIP4; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-20V;-55 - 70078893 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-20V;-55
70078893
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-20V;-55 70078893
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-20V;-55

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-20V;-55

Supplier's Site
Transistor - 16346937 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16346937
Transistor 16346937
POWER MOSFET, N CHANNEL, 100 V, 1.3 A, 0.27 OHM, HVMDIP, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

POWER MOSFET, N CHANNEL, 100 V, 1.3 A, 0.27 OHM, HVMDIP, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD120PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD120PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD120PBF
MOSFET N-CH 100V 1.3A 4DIP

MOSFET N-CH 100V 1.3A 4DIP

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Allied Electronics, Inc. Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number IRFD120PBF-ND 278-IRFD120PBF 017590-IRFD120PBF IRFD120PBF IRFD120PBF IRFD120PBF 19K8154 70078893 16346937 IRFD120PBF
Product Name Single FETs, MOSFETs N-Channel Through-Hole 100V 1.3A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD120PBF Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs MOSFET N Channel Mosfet, 100V, 1.3A, Hvmdip4; Channel Type Vishay MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-20V;-55 Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Package Type "4-DIP (0.300"", 7.62mm)" SOT3; 4-DIP, Hexdip, HVMDIP 4-DIP (0.300", 7.62mm) TO-3 HD-1 4-DIP (0.300, 7.62mm)
PD 1300 milliwatts 1300 milliwatts 1300 milliwatts 1300 milliwatts 1300 milliwatts
TJ -55 C (-67 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
V(BR)DSS 100 volts 100 volts 100 volts 100 volts
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