Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD113PBF IRFD113PBF

Manufacturer: Vishay
Win Source Part Number: 107561-IRFD113PBF
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 800mA (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 800mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

N-Channel 60V 800mA (Tc) 1W (Tc) Through Hole 4-HVMDIP

Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP Product overview: IRFD113PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD113PBF can be used for catalog matching and distributor lookup.