N-Channel 60V 800mA (Tc) 1W (Tc) Through Hole 4-HVMDIP
Manufacturer: Vishay
Win Source Part Number: 107561-IRFD113PBF
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 800mA (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 800mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
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| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFD113PBF-ND | 107561-IRFD113PBF | IRFD113PBF | 880-IRFD113PBF | IRFD113PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD113PBF | MOSFET | Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | "4-DIP (0.300"", 7.62mm)" | SOT3; 4-HVMDIP | 4-DIP (0.300, 7.62mm) | ||
| V(BR)DSS | 60 volts | 60 volts | |||
| PD | 1000 milliwatts | 1000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
