Vishay Precision Group Single FETs, MOSFETs IRFD110PBF

Description
MOSFET N-CH 100V 1A 4DIP
  • Single FETs, MOSFETs - IRFD110PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRFD110PBF-ND - DigiKey
    DigiKey
  • Transistor - 16346933 - Radwell International
    Radwell International
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD110PBF - 017589-IRFD110PBF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD110PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 100V, 1A, Hd-1; Channel Type Vishay - 19K8153 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-20V;VF 2. - 70078892 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP - 880-IRFD110PBF - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
MOSFET N-CH 100V 1A 4DIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFD110PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFD110PBF
Single FETs, MOSFETs IRFD110PBF
MOSFET N-CH 100V 1A 4DIP

MOSFET N-CH 100V 1A 4DIP

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFD110PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD110PBF-ND
Single FETs, MOSFETs IRFD110PBF-ND
N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
Transistor - 16346933 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16346933
Transistor 16346933
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DIP-4. FREE 2 YEAR RADWELL WARRANTY

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DIP-4. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD110PBF - 017589-IRFD110PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD110PBF
017589-IRFD110PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD110PBF 017589-IRFD110PBF
Manufacturer: Vishay Win Source Part Number: 017589-IRFD110PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Family Name: IRFD110 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.3nC @ 10V Max Input Capacitance: 180pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 600mA, 10V Alternative Parts (Cross-Reference): IRFD110; SiHFD110-E3; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017589-IRFD110PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Family Name: IRFD110
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.3nC @ 10V
Max Input Capacitance: 180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 540 mOhm @ 600mA, 10V
Alternative Parts (Cross-Reference): IRFD110; SiHFD110-E3;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD110PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD110PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD110PBF
MOSFET N-CH 100V 1A 4DIP

MOSFET N-CH 100V 1A 4DIP

Supplier's Site
N Channel Mosfet, 100V, 1A, Hd-1; Channel Type Vishay - 19K8153 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 1A, Hd-1; Channel Type Vishay
19K8153
N Channel Mosfet, 100V, 1A, Hd-1; Channel Type Vishay 19K8153
N CHANNEL MOSFET, 100V, 1A, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 1A, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

Supplier's Site
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-20V;VF 2. - 70078892 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-20V;VF 2.
70078892
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-20V;VF 2. 70078892
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-20V;VF 2.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-20V;VF 2.

Supplier's Site
Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP - 880-IRFD110PBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP
880-IRFD110PBF
Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP 880-IRFD110PBF
Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP

Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFD110PBF
MOSFET IRFD110PBF
MOSFET N-CH 100V HEXFET MOSFET HEXDI

MOSFET N-CH 100V HEXFET MOSFET HEXDI

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Radwell International Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Allied Electronics, Inc. Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFD110PBF IRFD110PBF-ND 16346933 017589-IRFD110PBF IRFD110PBF 19K8153 70078892 880-IRFD110PBF IRFD110PBF
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD110PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 100V, 1A, Hd-1; Channel Type Vishay MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-20V;VF 2. Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 100 volts 100 volts 100 volts 100 volts
IDSS 1000 milliamps 1000 milliamps
PD 1300 milliwatts 1300 milliwatts 1300 milliwatts 1300 milliwatts
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