Vishay Intertechnology, Inc. FETs - Single - IRFD024 IRFD024

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187557-IRFD024 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 4-DIP, Hexdip, HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: 4-DIP Power Dissipation (Maximum): 1.3W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 2.5A Rds On (Maximum) at Id, Vgs: 100mOhm at 1.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 640pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187557-IRFD024 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 4-DIP, Hexdip, HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: 4-DIP Power Dissipation (Maximum): 1.3W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 2.5A Rds On (Maximum) at Id, Vgs: 100mOhm at 1.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 640pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFD024 - 1187557-IRFD024 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFD024
1187557-IRFD024
FETs - Single - IRFD024 1187557-IRFD024
Manufacturer: Vishay Siliconix Win Source Part Number: 1187557-IRFD024 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 4-DIP, Hexdip, HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: 4-DIP Power Dissipation (Maximum): 1.3W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 2.5A Rds On (Maximum) at Id, Vgs: 100mOhm at 1.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 640pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187557-IRFD024
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 4-DIP
Power Dissipation (Maximum): 1.3W
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 2.5A
Rds On (Maximum) at Id, Vgs: 100mOhm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 640pF at 25V

Buy Now
Singapore
N-Channel Through-Hole 60V 2.5A MOSFET Transistor
278-IRFD024
N-Channel Through-Hole 60V 2.5A MOSFET Transistor 278-IRFD024
N-Channel MOSFET, 60V, 2.5A, 100mR, Through Hole DIP Product overview: IRFD024 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Through-Hole, 60V, 2.5A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 60V, 2.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD024 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 60V, 2.5A, 100mR, Through Hole DIP Product overview: IRFD024 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Through-Hole, 60V, 2.5A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 60V, 2.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD024 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD024 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD024
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD024
MOSFET N-CH 60V 2.5A 4DIP

MOSFET N-CH 60V 2.5A 4DIP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187557-IRFD024 278-IRFD024 IRFD024
Product Name FETs - Single - IRFD024 N-Channel Through-Hole 60V 2.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
QG 25 nC
PD 1300 milliwatts 1300 milliwatts
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