MOSFET N-CH 60V 1.7A 4DIP Product overview: IRFD014 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD014 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 1187555-IRFD014
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 4-DIP
Power Dissipation (Maximum): 1.3W
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 1.7A
Rds On (Maximum) at Id, Vgs: 200mOhm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 11nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 310pF at 25V
N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
MOSFET N-CH 60V 1.7A 4DIP
MOSFET N-CH 60V 1.7A 4-DIP
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFD014 | 1187555-IRFD014 | IRFD014-ND | IRFD014 | 880-IRFD014 |
| Product Name | 60V 1.7A MOSFET Transistor | FETs - Single - IRFD014 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 60V 1.7A 4-DIP |
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | Tube | SOT3 | "4-DIP (0.300"", 7.62mm)" | 4-DIP (0.300, 7.62mm) | |
| Packing Method | Tube | Tube; Tube | Tube; Tube | Tube; Tube | |
| Polarity | N-Channel; N-Channel | N-Channel |
