Vishay Precision Group 1KV 3.1A MOSFET Transistor IRFBG30PBF

Description
Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB Product overview: IRFBG30PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1KV, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1KV, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBG30PBF can be used for catalog matching and distributor lookup.
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Description
Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB Product overview: IRFBG30PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1KV, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1KV, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBG30PBF can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
1KV 3.1A MOSFET Transistor
278-IRFBG30PBF
1KV 3.1A MOSFET Transistor 278-IRFBG30PBF
Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB Product overview: IRFBG30PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1KV, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1KV, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBG30PBF can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB Product overview: IRFBG30PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1KV, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1KV, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBG30PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBG30PBF - 017587-IRFBG30PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBG30PBF
017587-IRFBG30PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBG30PBF 017587-IRFBG30PBF
Manufacturer: Vishay Win Source Part Number: 017587-IRFBG30PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: IRFBG30 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 980pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 1.9A, 10V Alternative Parts (Cross-Reference): IRFBG30LPBF; IRFBG30L; IXTP3N100P; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient Application Field: Used in Audio, Signal Processing, Industrial

Manufacturer: Vishay
Win Source Part Number: 017587-IRFBG30PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: IRFBG30
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 980pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 1.9A, 10V
Alternative Parts (Cross-Reference): IRFBG30LPBF; IRFBG30L; IXTP3N100P;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Audio, Signal Processing, Industrial

Buy Now Datasheet
Single FETs, MOSFETs - IRFBG30PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBG30PBF-ND
Single FETs, MOSFETs IRFBG30PBF-ND
N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB

N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Single FETs, MOSFETs - IRFBG30PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFBG30PBF
Single FETs, MOSFETs IRFBG30PBF
MOSFET N-CH 1000V 3.1A TO220AB

MOSFET N-CH 1000V 3.1A TO220AB

Supplier's Site Datasheet
MOSFETs - 5411146 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5411146
MOSFETs 5411146
MOSFET N-Channel 1KV 3.1A TO220AB

MOSFET N-Channel 1KV 3.1A TO220AB

Supplier's Site
N Channel Mosfet, 1Kv, 3.1A, To-220; Channel Type Vishay - 63J6702 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 1Kv, 3.1A, To-220; Channel Type Vishay
63J6702
N Channel Mosfet, 1Kv, 3.1A, To-220; Channel Type Vishay 63J6702
N CHANNEL MOSFET, 1KV, 3.1A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:3.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 1KV, 3.1A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:3.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Power Mosfet, N Channel, 3.1 A, 1 Kv, 5 Ohm, 10 V, 4 V Rohs Compliant Vishay - 38K2473 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 3.1 A, 1 Kv, 5 Ohm, 10 V, 4 V Rohs Compliant Vishay
38K2473
Power Mosfet, N Channel, 3.1 A, 1 Kv, 5 Ohm, 10 V, 4 V Rohs Compliant Vishay 38K2473
Power MOSFET, N Channel, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V RoHS Compliant: Yes

Power MOSFET, N Channel, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 1000V HEXFET MOSFET

MOSFET N-CH 1000V HEXFET MOSFET

Buy Now Datasheet
Transistor - 16352805 - Radwell International
Willingboro, NJ, United States
Transistor
16352805
Transistor 16352805
POWER FIELD-EFFECT TRANSISTOR, 3.1A I(D), 1000V, 5OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 3.1A I(D), 1000V, 5OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 5Ohms;ID 3.1A;TO-220AB;PD 125W;VGS +/-20V - 70078890 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 5Ohms;ID 3.1A;TO-220AB;PD 125W;VGS +/-20V
70078890
MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 5Ohms;ID 3.1A;TO-220AB;PD 125W;VGS +/-20V 70078890
MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 5Ohms;ID 3.1A;TO-220AB;PD 125W;VGS +/-20V

MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 5Ohms;ID 3.1A;TO-220AB;PD 125W;VGS +/-20V

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRFBG30PBF
Triode/MOS Tube/Transistor >> MOSFETs IRFBG30PBF
1kV 3.1A 5Ω@10V,1.9A 125W 4V@250uA N Channel TO-220 MOSFETs ROHS

1kV 3.1A 5Ω@10V,1.9A 125W 4V@250uA N Channel TO-220 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBG30PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBG30PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBG30PBF
MOSFET N-CH 1000V 3.1A TO220AB

MOSFET N-CH 1000V 3.1A TO220AB

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey ODG (Origin Data Global) RS Components, Ltd. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Radwell International Allied Electronics, Inc. LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-IRFBG30PBF 017587-IRFBG30PBF IRFBG30PBF-ND IRFBG30PBF 5411146 63J6702 38K2473 IRFBG30PBF 16352805 70078890 IRFBG30PBF IRFBG30PBF
Product Name 1KV 3.1A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBG30PBF Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs N Channel Mosfet, 1Kv, 3.1A, To-220; Channel Type Vishay Power Mosfet, N Channel, 3.1 A, 1 Kv, 5 Ohm, 10 V, 4 V Rohs Compliant Vishay MOSFET Transistor MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 5Ohms;ID 3.1A;TO-220AB;PD 125W;VGS +/-20V Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement Enhancement
PD 125 milliwatts 125000 milliwatts 125000 milliwatts 125000 milliwatts 125000 milliwatts
Package Type Tube TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-220; To-220ab TO-3; TO-220 TO-3 TO-220 TO-220 TO-220; TO-220-3
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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