Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB Product overview: IRFBG30PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1KV, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1KV, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBG30PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 017587-IRFBG30PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: IRFBG30
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 980pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 1.9A, 10V
Alternative Parts (Cross-Reference): IRFBG30LPBF; IRFBG30L; IXTP3N100P;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Audio, Signal Processing, Industrial
N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
MOSFET N-CH 1000V 3.1A TO220AB
N CHANNEL MOSFET, 1KV, 3.1A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:3.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
Power MOSFET, N Channel, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 3.1A I(D), 1000V, 5OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 5Ohms;ID 3.1A;TO-220AB;PD 125W;VGS +/-20V
1kV 3.1A 5Ω@10V,1.9A 125W 4V@250uA N Channel TO-220 MOSFETs ROHS
MOSFET N-CH 1000V 3.1A TO220AB
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | Allied Electronics, Inc. | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFBG30PBF | 017587-IRFBG30PBF | IRFBG30PBF-ND | IRFBG30PBF | 5411146 | 63J6702 | 38K2473 | IRFBG30PBF | 16352805 | 70078890 | IRFBG30PBF | IRFBG30PBF |
| Product Name | 1KV 3.1A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBG30PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | N Channel Mosfet, 1Kv, 3.1A, To-220; Channel Type Vishay | Power Mosfet, N Channel, 3.1 A, 1 Kv, 5 Ohm, 10 V, 4 V Rohs Compliant Vishay | MOSFET | Transistor | MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 5Ohms;ID 3.1A;TO-220AB;PD 125W;VGS +/-20V | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||||
| PD | 125 milliwatts | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | |||||||
| Package Type | Tube | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; To-220ab | TO-3; TO-220 | TO-3 | TO-220 | TO-220 | TO-220; TO-220-3 | ||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |
