Manufacturer: Vishay
Win Source Part Number: 017586-IRFBG20PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 54W (Tc)
Family Name: IRFBG20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 1.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 Ohm @ 840mA, 10V
Alternative Parts (Cross-Reference): STP1N105K3; IXTP1N100P; IXTP1R4N100P; MTP1N100E;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
N-Channel MOSFET, 1kV, 1.4A, 11R, TO-220AB Product overview: IRFBG20PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1kV, 1.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1kV, 1.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBG20PBF can be used for catalog matching and distributor lookup.
N-Channel 1000V 1.4A (Tc) 54W (Tc) Through Hole TO-220AB
MOSFET N-CH 1000V 1.4A TO220AB
MOSFET N-CH 1000V 1.4A TO220AB
Power MOSFET, N Channel, 1.3 A, 1 kV, 11.5 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 1000V 1.4A TO-220AB
MOSFET RECOMMENDED ALT 844-IRFBF20PBF
1kV 1.4A 11Ω@840mA,10V 54W 4V@250uA null TO-220AB MOSFETs ROHS
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017586-IRFBG20PBF | 278-IRFBG20PBF | 5429563 | IRFBG20PBF-ND | IRFBG20PBF | IRFBG20PBF | 38K2472 | 880-IRFBG20PBF | IRFBG20PBF | IRFBG20PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBG20PBF | N-Channel 1kV 1.4A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Power Mosfet, N Channel, 1.3 A, 1 Kv, 11.5 Ohm, 10 V, 4 V Rohs Compliant Vishay | MOSFET N-CH 1000V 1.4A TO-220AB | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 1000 volts | 1000 volts | 1000 volts | 1000 volts | ||||||
| PD | 54000 milliwatts | 54000 milliwatts | 54000 milliwatts | 54000 milliwatts | 54000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; To-220ab | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 | TO-220 |
