Vishay Precision Group Single FETs, MOSFETs IRFBG20PBF

Description
N-Channel 1000V 1.4A (Tc) 54W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 1000V 1.4A (Tc) 54W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFBG20PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBG20PBF-ND
Single FETs, MOSFETs IRFBG20PBF-ND
N-Channel 1000V 1.4A (Tc) 54W (Tc) Through Hole TO-220AB

N-Channel 1000V 1.4A (Tc) 54W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Singapore
N-Channel 1kV 1.4A MOSFET Transistor
278-IRFBG20PBF
N-Channel 1kV 1.4A MOSFET Transistor 278-IRFBG20PBF
N-Channel MOSFET, 1kV, 1.4A, 11R, TO-220AB Product overview: IRFBG20PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1kV, 1.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1kV, 1.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBG20PBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 1kV, 1.4A, 11R, TO-220AB Product overview: IRFBG20PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1kV, 1.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1kV, 1.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBG20PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 5429563 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5429563
MOSFETs 5429563
MOSFET N-Channel 1KV 1.4A TO220AB

MOSFET N-Channel 1KV 1.4A TO220AB

Supplier's Site
MOSFETs - 1780845 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1780845
MOSFETs 1780845
MOSFET N-Channel 1KV 1.4A TO220AB

MOSFET N-Channel 1KV 1.4A TO220AB

Supplier's Site
Single FETs, MOSFETs - IRFBG20PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFBG20PBF
Single FETs, MOSFETs IRFBG20PBF
MOSFET N-CH 1000V 1.4A TO220AB

MOSFET N-CH 1000V 1.4A TO220AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBG20PBF - 017586-IRFBG20PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBG20PBF
017586-IRFBG20PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBG20PBF 017586-IRFBG20PBF
Manufacturer: Vishay Win Source Part Number: 017586-IRFBG20PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 54W (Tc) Family Name: IRFBG20 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 1.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 Ohm @ 840mA, 10V Alternative Parts (Cross-Reference): STP1N105K3; IXTP1N100P; IXTP1R4N100P; MTP1N100E; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017586-IRFBG20PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 54W (Tc)
Family Name: IRFBG20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 1.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 Ohm @ 840mA, 10V
Alternative Parts (Cross-Reference): STP1N105K3; IXTP1N100P; IXTP1R4N100P; MTP1N100E;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFET N-CH 1000V 1.4A TO-220AB - 880-IRFBG20PBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1000V 1.4A TO-220AB
880-IRFBG20PBF
MOSFET N-CH 1000V 1.4A TO-220AB 880-IRFBG20PBF
MOSFET N-CH 1000V 1.4A TO-220AB

MOSFET N-CH 1000V 1.4A TO-220AB

Supplier's Site
Power Mosfet, N Channel, 1.3 A, 1 Kv, 11.5 Ohm, 10 V, 4 V Rohs Compliant Vishay - 38K2472 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 1.3 A, 1 Kv, 11.5 Ohm, 10 V, 4 V Rohs Compliant Vishay
38K2472
Power Mosfet, N Channel, 1.3 A, 1 Kv, 11.5 Ohm, 10 V, 4 V Rohs Compliant Vishay 38K2472
Power MOSFET, N Channel, 1.3 A, 1 kV, 11.5 ohm, 10 V, 4 V RoHS Compliant: Yes

Power MOSFET, N Channel, 1.3 A, 1 kV, 11.5 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 844-IRFBF20PBF

MOSFET RECOMMENDED ALT 844-IRFBF20PBF

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBG20PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBG20PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBG20PBF
MOSFET N-CH 1000V 1.4A TO220AB

MOSFET N-CH 1000V 1.4A TO220AB

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRFBG20PBF
Triode/MOS Tube/Transistor >> MOSFETs IRFBG20PBF
1kV 1.4A 11Ω@840mA,10V 54W 4V@250uA null TO-220AB MOSFETs ROHS

1kV 1.4A 11Ω@840mA,10V 54W 4V@250uA null TO-220AB MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. RS Components, Ltd. ODG (Origin Data Global) Win Source Electronics Utmel Electronic Limited Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFBG20PBF-ND 278-IRFBG20PBF 5429563 IRFBG20PBF 017586-IRFBG20PBF 880-IRFBG20PBF 38K2472 IRFBG20PBF IRFBG20PBF IRFBG20PBF
Product Name Single FETs, MOSFETs N-Channel 1kV 1.4A MOSFET Transistor MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBG20PBF MOSFET N-CH 1000V 1.4A TO-220AB Power Mosfet, N Channel, 1.3 A, 1 Kv, 11.5 Ohm, 10 V, 4 V Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; To-220ab TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-3 TO-220; TO-220-3 TO-220
PD 54000 milliwatts 54000 milliwatts 54000 milliwatts 54000 milliwatts 54000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
MOSFET Operating Mode Enhancement
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