MOSFET N-CH 900V 1.7A I2PAK
N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Through Hole I2PAK
Manufacturer: Vishay
Win Source Part Number: 136872-IRFBF20LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
MOSFET N-CH 900V 1.7A I2PAK
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFBF20LPBF | IRFBF20LPBF-ND | 136872-IRFBF20LPBF | IRFBF20LPBF | IRFBF20LPBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20LPBF | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 900 volts | 900 volts | |||
| IDSS | 1700 milliamps |
