800V 4.1A N-Channel MOSFET, 3R Rds On, D2PAK Product overview: IRFBE30SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBE30SPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 777050-IRFBE30SPBF
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Family Name: IRFBE30S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1300pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): MTB4N80E; MTB4N80ET4; MTB4N80E1; STB4NB80T4;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
MOSFET N-CH 800V 4.1A D2PAK
N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 800V 4.1A D2PAK
D2PAK(TO-263AB) MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFBE30SPBF | 777050-IRFBE30SPBF | IRFBE30SPBF | IRFBE30SPBF-ND | IRFBE30SPBF | IRFBE30SPBF | 17930-IRFBE30SPBF |
| Product Name | N-Channel 800V 4.1A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30SPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | D2PAK(TO-263AB) MOSFETs ROHS |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
