Vishay Precision Group Single FETs, MOSFETs IRFBE30SPBF

Description
N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFBE30SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBE30SPBF-ND
Single FETs, MOSFETs IRFBE30SPBF-ND
N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30SPBF - 777050-IRFBE30SPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30SPBF
777050-IRFBE30SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30SPBF 777050-IRFBE30SPBF
Manufacturer: Vishay Siliconix Win Source Part Number: 777050-IRFBE30SPBF Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Family Name: IRFBE30S Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1300pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 125W (Tc) Rds On (Maximum) @ Id, Vgs: 3 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): MTB4N80E; MTB4N80ET4; MTB4N80E1; STB4NB80T4; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 777050-IRFBE30SPBF
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Family Name: IRFBE30S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1300pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): MTB4N80E; MTB4N80ET4; MTB4N80E1; STB4NB80T4;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFBE30SPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFBE30SPBF
Single FETs, MOSFETs IRFBE30SPBF
MOSFET N-CH 800V 4.1A D2PAK

MOSFET N-CH 800V 4.1A D2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBE30SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBE30SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBE30SPBF
MOSFET N-CH 800V 4.1A D2PAK

MOSFET N-CH 800V 4.1A D2PAK

Supplier's Site
D2PAK(TO-263AB) MOSFETs ROHS - 17930-IRFBE30SPBF - Utmel Electronic Limited
Hong Kong, China
D2PAK(TO-263AB) MOSFETs ROHS
17930-IRFBE30SPBF
D2PAK(TO-263AB) MOSFETs ROHS 17930-IRFBE30SPBF
D2PAK(TO-263AB) MOSFETs ROHS

D2PAK(TO-263AB) MOSFETs ROHS

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Chan 800V 4.1 Amp

MOSFET N-Chan 800V 4.1 Amp

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFBE30SPBF-ND 777050-IRFBE30SPBF IRFBE30SPBF IRFBE30SPBF 17930-IRFBE30SPBF IRFBE30SPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30SPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs D2PAK(TO-263AB) MOSFETs ROHS MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PD 125000 milliwatts 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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