Vishay Intertechnology, Inc. FETs - Single - IRFBE30S IRFBE30S

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187545-IRFBE30S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 125W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 4.1A Rds On (Maximum) at Id, Vgs: 3Ohm at 2.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V
  • FETs - Single - IRFBE30S - 1187545-IRFBE30S - Win Source Electronics
    Win Source Electronics
  • MOSFET N-CH 800V 4.1A D2PAK - 880-IRFBE30S - Utmel Electronic Limited
    Utmel Electronic Limited
  • Integrated Circuits (ICs) - Transistors - MOSFETs - IRFBE30S - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187545-IRFBE30S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 125W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 4.1A Rds On (Maximum) at Id, Vgs: 3Ohm at 2.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFBE30S - 1187545-IRFBE30S - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFBE30S
1187545-IRFBE30S
FETs - Single - IRFBE30S 1187545-IRFBE30S
Manufacturer: Vishay Siliconix Win Source Part Number: 1187545-IRFBE30S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 125W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 4.1A Rds On (Maximum) at Id, Vgs: 3Ohm at 2.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187545-IRFBE30S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 125W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 4.1A
Rds On (Maximum) at Id, Vgs: 3Ohm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

Buy Now
MOSFET N-CH 800V 4.1A D2PAK - 880-IRFBE30S - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V 4.1A D2PAK
880-IRFBE30S
MOSFET N-CH 800V 4.1A D2PAK 880-IRFBE30S
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MOSFET N-CH 800V 4.1A D2PAK

Supplier's Site
Integrated Circuits (ICs) - Transistors - MOSFETs - IRFBE30S - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
IRFBE30S
Integrated Circuits (ICs) - Transistors - MOSFETs IRFBE30S
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187545-IRFBE30S 880-IRFBE30S IRFBE30S
Product Name FETs - Single - IRFBE30S MOSFET N-CH 800V 4.1A D2PAK Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 800 volts 800 volts
QG 78 nC
PD 125000 milliwatts 125000 milliwatts
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