TRANSISTOR, MOSFET, N CHANNEL, 800 V, 4.1 A, 3 OHM, 125W, TO-220. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Vishay
Win Source Part Number: 017583-IRFBE30PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: IRFBE30
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 4.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): MTP4N80E; STP4NB80; TSM3N80CZ C0G;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET N-CH 800V 4.1A TO220AB
N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
MOSFET N-Channel 800V 4.1A TO220AB
MOSFET N-Channel 800V 4.1A TO220AB
MOSFET N-Channel 800V 4.1A TO220AB
MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 3 Ohms;ID 4.1A;TO-220AB;PD 125W;VGS +/-20V
N CHANNEL MOSFET, 800V, 4.1A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
Power MOSFET, N Channel, 4.1 A, 800 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes
| Radwell International | Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | 16352753 | 017583-IRFBE30PBF | IRFBE30PBF | IRFBE30PBF-ND | 5411124 | 5411124P | 70078888 | IRFBE30PBF | 63J6695 | 38K2467 |
| Product Name | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 3 Ohms;ID 4.1A;TO-220AB;PD 125W;VGS +/-20V | MOSFET | N Channel Mosfet, 800V, 4.1A To-220; Channel Type Vishay | Power Mosfet, N Channel, 4.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 800 volts | 800 volts | 800 volts | |||||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; TO-220 | TO-220 | TO-3; TO-220 | TO-3 |
