Vishay Intertechnology, Inc. FETs - Single - IRFBE30L IRFBE30L

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187544-IRFBE30L
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 125W
Alternative Parts (Cross-Reference): STB7NK80Z-1; 2SK2884(Q); FQI7N80;
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 4.1A
Rds On (Maximum) at Id, Vgs: 3Ohm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

MOSFET N-CH 800V 4.1A I2PAK Product overview: IRFBE30L from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBE30L can be used for catalog matching and distributor lookup.