N-Channel 800V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB
TRANSISTOR, MOSFET, N CHANNEL POLARITY, 800V DRAIN SOURCE VOLTAGE, 1.8 AMP CONTINUOUS DRAIN CURRENT, 6.5 OHM ON RESISTANCE, 4V THRESHOLD, 10V TEST VOLTAGE, TO-220-3 CASE, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Vishay
Win Source Part Number: 017582-IRFBE20PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 54W (Tc)
Family Name: IRFBE20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 530pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 Ohm @ 1.1A, 10V
Alternative Parts (Cross-Reference): BUZ78; BUZ78 E3046; IXTP2N80; IXTP2N80SN;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
MOSFET N-Channel 800V 1.8A TO220AB
MOSFET N-Channel 800V 1.8A TO220AB
N CHANNEL MOSFET, 800V, 1.8A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 800V 1.8A TO220AB
| DigiKey | Radwell International | Win Source Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFBE20PBF-ND | 16352745 | 017582-IRFBE20PBF | 5429535 | IRFBE20PBF | 63J6693 | IRFBE20PBF |
| Product Name | Single FETs, MOSFETs | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE20PBF | MOSFETs | MOSFET | N Channel Mosfet, 800V, 1.8A To-220; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; To-220ab | TO-3; TO-220 | TO-220; TO-220-3 | ||
| V(BR)DSS | 800 volts | ||||||
| PD | 54000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) |
