N-Channel 800V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB
800V 1.8A N-Channel MOSFET TO-220AB 6.5R Product overview: IRFBE20PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 1.8A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFBE20PBF can be used for catalog matching and distributor lookup.
MOSFET N-Channel 800V 1.8A TO220AB
MOSFET N-Channel 800V 1.8A TO220AB
Manufacturer: Vishay
Win Source Part Number: 017582-IRFBE20PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 54W (Tc)
Family Name: IRFBE20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 530pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 Ohm @ 1.1A, 10V
Alternative Parts (Cross-Reference): BUZ78; BUZ78 E3046; IXTP2N80; IXTP2N80SN;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
MOSFET N-CH 800V 1.8A TO220AB
TRANSISTOR, MOSFET, N CHANNEL POLARITY, 800V DRAIN SOURCE VOLTAGE, 1.8 AMP CONTINUOUS DRAIN CURRENT, 6.5 OHM ON RESISTANCE, 4V THRESHOLD, 10V TEST VOLTAGE, TO-220-3 CASE, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 800V, 1.8A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFBE20PBF-ND | 2088-IRFBE20PBF | 5429535 | 017582-IRFBE20PBF | IRFBE20PBF | 16352745 | 63J6693 | IRFBE20PBF |
| Product Name | Single FETs, MOSFETs | N-Channel 800V 1.8A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE20PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | N Channel Mosfet, 800V, 1.8A To-220; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-3; TO-220 | |||
| PD | 54000 milliwatts | 54000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| MOSFET Operating Mode | Enhancement |
