Manufacturer: Vishay
Win Source Part Number: 017581-IRFBC40STRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 600V 6.2A D2PAK
MOSFET, N CH, 600V, 6.2A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 600V 6.2A D2PAK
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 017581-IRFBC40STRLPBF | IRFBC40STRLPBFDKR-ND | IRFBC40STRLPBF | IRFBC40STRLPBF | 05W6845 | IRFBC40STRLPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40STRLPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N Ch, 600V, 6.2A, To-263-3; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | ||||
| PD | 3100 to 130000 milliwatts | 3100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
