N-Channel MOSFET, 600V, 6.2A, 1.2 Ohm, D2PAK Product overview: IRFBC40SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 6.2A, 1.2 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.2A, 1.2 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBC40SPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 1187540-IRFBC40SPBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.1W, 130W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 6.2A
Rds On (Maximum) at Id, Vgs: 1.2Ohm at 3.7A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 60nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V
N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 600V 6.2A D2PAK
N CHANNEL MOSFET, 600V, 6.2A D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 600V 6.2A D2PAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFBC40SPBF | 1187540-IRFBC40SPBF | IRFBC40SPBF-ND | IRFBC40SPBF | 63J6692 | IRFBC40SPBF | 880-IRFBC40SPBF |
| Product Name | N-Channel 600V 6.2A 1.2 Ohm MOSFET Transistor | FETs - Single - IRFBC40SPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 600V, 6.2A D2-Pak; Channel Type Vishay | MOSFET | MOSFET N-CH 600V 6.2A D2PAK |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 3100 milliwatts | 3100 to 130000 milliwatts | 3100 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| QG | 60 nC |
