Vishay Precision Group Single FETs, MOSFETs IRFBC40SPBF

Description
N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
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Description
N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFBC40SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBC40SPBF-ND
Single FETs, MOSFETs IRFBC40SPBF-ND
N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
FETs - Single - IRFBC40SPBF - 1187540-IRFBC40SPBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFBC40SPBF
1187540-IRFBC40SPBF
FETs - Single - IRFBC40SPBF 1187540-IRFBC40SPBF
Manufacturer: Vishay Siliconix Win Source Part Number: 1187540-IRFBC40SPBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 130W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 6.2A Rds On (Maximum) at Id, Vgs: 1.2Ohm at 3.7A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 60nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187540-IRFBC40SPBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.1W, 130W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 6.2A
Rds On (Maximum) at Id, Vgs: 1.2Ohm at 3.7A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 60nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

Buy Now
N Channel Mosfet, 600V, 6.2A D2-Pak; Channel Type Vishay - 63J6692 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 6.2A D2-Pak; Channel Type Vishay
63J6692
N Channel Mosfet, 600V, 6.2A D2-Pak; Channel Type Vishay 63J6692
N CHANNEL MOSFET, 600V, 6.2A D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 6.2A D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
MOSFET N-CH 600V 6.2A D2PAK - 880-IRFBC40SPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 6.2A D2PAK
880-IRFBC40SPBF
MOSFET N-CH 600V 6.2A D2PAK 880-IRFBC40SPBF
MOSFET N-CH 600V 6.2A D2PAK

MOSFET N-CH 600V 6.2A D2PAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC40SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC40SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC40SPBF
MOSFET N-CH 600V 6.2A D2PAK

MOSFET N-CH 600V 6.2A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Chan 600V 6.2 Amp

MOSFET N-Chan 600V 6.2 Amp

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFBC40SPBF-ND 1187540-IRFBC40SPBF 63J6692 880-IRFBC40SPBF IRFBC40SPBF IRFBC40SPBF
Product Name Single FETs, MOSFETs FETs - Single - IRFBC40SPBF N Channel Mosfet, 600V, 6.2A D2-Pak; Channel Type Vishay MOSFET N-CH 600V 6.2A D2PAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 600 volts 600 volts
QG 60 nC
PD 3100 to 130000 milliwatts 3100 milliwatts
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