Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40LCPBF IRFBC40LCPBF

Description
Manufacturer: Vishay Win Source Part Number: 017578-IRFBC40LCPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 017578-IRFBC40LCPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40LCPBF - 017578-IRFBC40LCPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40LCPBF
017578-IRFBC40LCPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40LCPBF 017578-IRFBC40LCPBF
Manufacturer: Vishay Win Source Part Number: 017578-IRFBC40LCPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017578-IRFBC40LCPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFBC40LCPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBC40LCPBF-ND
Single FETs, MOSFETs IRFBC40LCPBF-ND
N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB

N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB

Buy Now Datasheet
N Ch Mosfet, 600V, 6.2A, To-220Ab; Channel Type Vishay - 63J6689 - Newark, An Avnet Company
Chicago, IL, United States
N Ch Mosfet, 600V, 6.2A, To-220Ab; Channel Type Vishay
63J6689
N Ch Mosfet, 600V, 6.2A, To-220Ab; Channel Type Vishay 63J6689
N CH MOSFET, 600V, 6.2A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CH MOSFET, 600V, 6.2A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 600V HEXFET MOSFET

MOSFET N-CH 600V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC40LCPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC40LCPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC40LCPBF
MOSFET N-CH 600V 6.2A TO220AB

MOSFET N-CH 600V 6.2A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 017578-IRFBC40LCPBF IRFBC40LCPBF-ND 63J6689 IRFBC40LCPBF IRFBC40LCPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40LCPBF Single FETs, MOSFETs N Ch Mosfet, 600V, 6.2A, To-220Ab; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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