N channel ;VBRDSS 600 V; RDSon 1200 mO
N channel ;VBRDSS 600 V; RDSon 1200 mO
N CHANNEL MOSFET, 600V, 6.2A TO-220, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:600V, CONTINUOUS DRAIN CURRENT ID:6.2A, ON RESISTANCE RDS(ON):1.2OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Vishay
Win Source Part Number: 017579-IRFBC40APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1036pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 6.2A TO220AB
N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB
N CHANNEL MOSFET, 600V, 6.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
Power MOSFET, N Channel, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 600V 6.2A TO220AB
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.2 Ohms;ID 6.2A;TO-220AB;PD 125W;VGS +/-30
| RS Components, Ltd. | Radwell International | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1808315 | 16352693 | 017579-IRFBC40APBF | IRFBC40APBF | IRFBC40APBF-ND | IRFBC40APBF | 63J6687 | 38K2463 | IRFBC40APBF | 70078884 |
| Product Name | MOSFETs | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40APBF | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | N Channel Mosfet, 600V, 6.2A To-220; Channel Type Vishay | Power Mosfet, N Channel, 6.2 A, 600 V, 1.2 Ohm, 10 V, 4 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.2 Ohms;ID 6.2A;TO-220AB;PD 125W;VGS +/-30 |
| Package Type | TO-220; TO-220AB | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | TO-3 | TO-220; TO-220-3 | TO-220 | ||
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | |||||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
