Vishay Precision Group MOSFETs IRFBC40APBF

Description
N channel ;VBRDSS 600 V; RDSon 1200 mO
Request a Quote Datasheet
Description
N channel ;VBRDSS 600 V; RDSon 1200 mO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 1808315 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808315
MOSFETs 1808315
N channel ;VBRDSS 600 V; RDSon 1200 mO

N channel ;VBRDSS 600 V; RDSon 1200 mO

Supplier's Site
MOSFETs - 1808656 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808656
MOSFETs 1808656
N channel ;VBRDSS 600 V; RDSon 1200 mO

N channel ;VBRDSS 600 V; RDSon 1200 mO

Supplier's Site
Single FETs, MOSFETs - IRFBC40APBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBC40APBF-ND
Single FETs, MOSFETs IRFBC40APBF-ND
N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB

N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Transistor - 16352693 - Radwell International
Willingboro, NJ, United States
Transistor
16352693
Transistor 16352693
N CHANNEL MOSFET, 600V, 6.2A TO-220, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:600V, CONTINUOUS DRAIN CURRENT ID:6.2A, ON RESISTANCE RDS(ON):1.2OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 600V, 6.2A TO-220, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:600V, CONTINUOUS DRAIN CURRENT ID:6.2A, ON RESISTANCE RDS(ON):1.2OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRFBC40APBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFBC40APBF
Single FETs, MOSFETs IRFBC40APBF
MOSFET N-CH 600V 6.2A TO220AB

MOSFET N-CH 600V 6.2A TO220AB

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40APBF - 017579-IRFBC40APBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40APBF
017579-IRFBC40APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40APBF 017579-IRFBC40APBF
Manufacturer: Vishay Win Source Part Number: 017579-IRFBC40APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1036pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017579-IRFBC40APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1036pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
N Channel Mosfet, 600V, 6.2A To-220; Channel Type Vishay - 63J6687 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 6.2A To-220; Channel Type Vishay
63J6687
N Channel Mosfet, 600V, 6.2A To-220; Channel Type Vishay 63J6687
N CHANNEL MOSFET, 600V, 6.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 6.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Power Mosfet, N Channel, 6.2 A, 600 V, 1.2 Ohm, 10 V, 4 V Rohs Compliant Vishay - 38K2463 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 6.2 A, 600 V, 1.2 Ohm, 10 V, 4 V Rohs Compliant Vishay
38K2463
Power Mosfet, N Channel, 6.2 A, 600 V, 1.2 Ohm, 10 V, 4 V Rohs Compliant Vishay 38K2463
Power MOSFET, N Channel, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V RoHS Compliant: Yes

Power MOSFET, N Channel, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V HEXFET MOSFET

MOSFET N-CH 600V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC40APBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC40APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC40APBF
MOSFET N-CH 600V 6.2A TO220AB

MOSFET N-CH 600V 6.2A TO220AB

Supplier's Site
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.2 Ohms;ID 6.2A;TO-220AB;PD 125W;VGS +/-30
70078884
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.2 Ohms;ID 6.2A;TO-220AB;PD 125W;VGS +/-30 70078884
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.2 Ohms;ID 6.2A;TO-220AB;PD 125W;VGS +/-30

MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.2 Ohms;ID 6.2A;TO-220AB;PD 125W;VGS +/-30

Supplier's Site

Technical Specifications

  RS Components, Ltd. DigiKey Radwell International ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1808315 IRFBC40APBF-ND 16352693 IRFBC40APBF 017579-IRFBC40APBF 63J6687 38K2463 IRFBC40APBF IRFBC40APBF 70078884
Product Name MOSFETs Single FETs, MOSFETs Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40APBF N Channel Mosfet, 600V, 6.2A To-220; Channel Type Vishay Power Mosfet, N Channel, 6.2 A, 600 V, 1.2 Ohm, 10 V, 4 V Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.2 Ohms;ID 6.2A;TO-220AB;PD 125W;VGS +/-30
Package Type TO-220; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-3; TO-220 TO-3 TO-220; TO-220-3 TO-220
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts 600 volts
IDSS 6200 milliamps 6200 milliamps
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