Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30SPBF IRFBC30SPBF

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 777047-IRFBC30SPBF Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Family Name: IRFBC30S Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 660pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 3.1W (Ta), 74W (Tc) Rds On (Maximum) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V Alternative Parts (Cross-Reference): STB2N62K3; STB3NB60; MTB3N60E; STB6NK60Z; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 777047-IRFBC30SPBF Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Family Name: IRFBC30S Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 660pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 3.1W (Ta), 74W (Tc) Rds On (Maximum) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V Alternative Parts (Cross-Reference): STB2N62K3; STB3NB60; MTB3N60E; STB6NK60Z; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30SPBF - 777047-IRFBC30SPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30SPBF
777047-IRFBC30SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30SPBF 777047-IRFBC30SPBF
Manufacturer: Vishay Siliconix Win Source Part Number: 777047-IRFBC30SPBF Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Family Name: IRFBC30S Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 660pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 3.1W (Ta), 74W (Tc) Rds On (Maximum) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V Alternative Parts (Cross-Reference): STB2N62K3; STB3NB60; MTB3N60E; STB6NK60Z; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Vishay Siliconix
Win Source Part Number: 777047-IRFBC30SPBF
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Family Name: IRFBC30S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 660pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.1W (Ta), 74W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
Alternative Parts (Cross-Reference): STB2N62K3; STB3NB60; MTB3N60E; STB6NK60Z;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFBC30SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBC30SPBF-ND
Single FETs, MOSFETs IRFBC30SPBF-ND
N-Channel 600V 3.6A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 3.6A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC30SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC30SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC30SPBF
MOSFET N-CH 600V 3.6A D2PAK

MOSFET N-CH 600V 3.6A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Chan 600V 3.6 Amp

MOSFET N-Chan 600V 3.6 Amp

Buy Now Datasheet
MOSFET N-CH 600V 3.6A D2PAK - 880-IRFBC30SPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 3.6A D2PAK
880-IRFBC30SPBF
MOSFET N-CH 600V 3.6A D2PAK 880-IRFBC30SPBF
MOSFET N-CH 600V 3.6A D2PAK

MOSFET N-CH 600V 3.6A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 777047-IRFBC30SPBF IRFBC30SPBF-ND IRFBC30SPBF IRFBC30SPBF 880-IRFBC30SPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30SPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 600V 3.6A D2PAK
PD 3100 to 74000 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Tube; Tube Tube; Tube Tube; Tube
Unlock Full Specs
to access all available technical data

Similar Products

DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-20 - Qorvo
Specs
Transistor Technology / Material GaN on SiC
Transistor Grade / Operating Range Military
Package Type Die
View Details
2 suppliers
OEM Souring - 1465641-AIKW75N60CTXKSA1 - Win Source Electronics
Infineon Technologies AG
Specs
Package Type SOT3
View Details
6 suppliers