Vishay Intertechnology, Inc. FETs - Single - IRFBC30A IRFBC30A

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187527-IRFBC30A Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 74W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 3.6A Rds On (Maximum) at Id, Vgs: 2.2Ohm at 2.2A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 510pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187527-IRFBC30A Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 74W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 3.6A Rds On (Maximum) at Id, Vgs: 2.2Ohm at 2.2A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 510pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFBC30A - 1187527-IRFBC30A - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFBC30A
1187527-IRFBC30A
FETs - Single - IRFBC30A 1187527-IRFBC30A
Manufacturer: Vishay Siliconix Win Source Part Number: 1187527-IRFBC30A Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 74W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 3.6A Rds On (Maximum) at Id, Vgs: 2.2Ohm at 2.2A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 510pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187527-IRFBC30A
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 74W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 3.6A
Rds On (Maximum) at Id, Vgs: 2.2Ohm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 510pF at 25V

Buy Now
Single FETs, MOSFETs - IRFBC30A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBC30A-ND
Single FETs, MOSFETs IRFBC30A-ND
N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB

N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC30A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC30A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC30A
MOSFET N-CH 600V 3.6A TO220AB

MOSFET N-CH 600V 3.6A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number 1187527-IRFBC30A IRFBC30A-ND IRFBC30A
Product Name FETs - Single - IRFBC30A Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
QG 23 nC
PD 74000 milliwatts
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