Manufacturer: Vishay Siliconix
Win Source Part Number: 1187523-IRFBC20LPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 3.1W, 50W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 2.2A
Rds On (Maximum) at Id, Vgs: 4.4Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 18nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 350pF at 25V
MOSFET N-CH 600V 2.2A TO262-3
MOSFET N-CH 600V 2.2A TO-262
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1187523-IRFBC20LPBF | IRFBC20LPBF | 880-IRFBC20LPBF |
| Product Name | FETs - Single - IRFBC20LPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 600V 2.2A TO-262 |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 600 volts | ||
| QG | 18 nC | ||
| PD | 3100 to 50000 milliwatts | 3100 milliwatts |
