MOSFET N-CH 650V 8.5A TO220AB Product overview: IRFB9N65A from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 8.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 8.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB9N65A can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 1187516-IRFB9N65A
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 167W
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 8.5A
Rds On (Maximum) at Id, Vgs: 930mOhm at 5.1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 48nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1417pF at 25V
N-Channel 650V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB
MOSFET N-CH 650V 8.5A TO-220AB
MOSFET N-CH 650V 8.5A TO220AB
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFB9N65A | 1187516-IRFB9N65A | IRFB9N65A-ND | 880-IRFB9N65A | IRFB9N65A |
| Product Name | 650V 8.5A MOSFET Transistor | FETs - Single - IRFB9N65A | Single FETs, MOSFETs | MOSFET N-CH 650V 8.5A TO-220AB | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 167000 milliwatts | 167000 milliwatts | 167000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tube | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | |
| Packing Method | Tube | Tube; Tube | Tube; Tube | Tube; Tube |
