Vishay Precision Group Single FETs, MOSFETs IRFB13N50APBF

Description
N-Channel 500V 14A (Tc) 250W (Tc) Through Hole TO-220AB
  • Single FETs, MOSFETs - IRFB13N50APBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB13N50APBF - 133721-IRFB13N50APBF - Win Source Electronics
    Win Source Electronics
  • Mosfet, N-Ch, 500V, 14A, To-220 Rohs Compliant Vishay - 56AJ9863 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 500V 14A (Tc) 250W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFB13N50APBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB13N50APBF-ND
Single FETs, MOSFETs IRFB13N50APBF-ND
N-Channel 500V 14A (Tc) 250W (Tc) Through Hole TO-220AB

N-Channel 500V 14A (Tc) 250W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB13N50APBF - 133721-IRFB13N50APBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB13N50APBF
133721-IRFB13N50APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB13N50APBF 133721-IRFB13N50APBF
Manufacturer: Vishay Win Source Part Number: 133721-IRFB13N50APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 81nC @ 10V Max Input Capacitance: 1910pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 450 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 133721-IRFB13N50APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 81nC @ 10V
Max Input Capacitance: 1910pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 450 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Mosfet, N-Ch, 500V, 14A, To-220 Rohs Compliant Vishay - 56AJ9863 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 14A, To-220 Rohs Compliant Vishay
56AJ9863
Mosfet, N-Ch, 500V, 14A, To-220 Rohs Compliant Vishay 56AJ9863
MOSFET, N-CH, 500V, 14A, TO-220 ROHS COMPLIANT: YES

MOSFET, N-CH, 500V, 14A, TO-220 ROHS COMPLIANT: YES

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFB13N50APBF
MOSFET IRFB13N50APBF
MOSFET N-CH 500V HEXFET MOSFET

MOSFET N-CH 500V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFB13N50APBF-ND 133721-IRFB13N50APBF 56AJ9863 IRFB13N50APBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB13N50APBF Mosfet, N-Ch, 500V, 14A, To-220 Rohs Compliant Vishay MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-3; TO-220
V(BR)DSS 500 volts
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