Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34SPBF IRF9Z34SPBF

Description
Manufacturer: Vishay Win Source Part Number: 128424-IRF9Z34SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34SPBF - 128424-IRF9Z34SPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF9Z34SPBF-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IRF9Z34SPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFETs - 2567281P - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 2567281 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 2567280 - RS Components, Ltd.
    RS Components, Ltd.
  • P Channel Mosfet, -60V, 18A, D2-Pak; Channel Type Vishay - 58K5791 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z34SPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 128424-IRF9Z34SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34SPBF - 128424-IRF9Z34SPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34SPBF
128424-IRF9Z34SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34SPBF 128424-IRF9Z34SPBF
Manufacturer: Vishay Win Source Part Number: 128424-IRF9Z34SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 128424-IRF9Z34SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF9Z34SPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9Z34SPBF-ND
Single FETs, MOSFETs IRF9Z34SPBF-ND
P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - IRF9Z34SPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF9Z34SPBF
Single FETs, MOSFETs IRF9Z34SPBF
MOSFET P-CH 60V 18A D2PAK

MOSFET P-CH 60V 18A D2PAK

Supplier's Site Datasheet
MOSFETs - 2567281P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567281P
MOSFETs 2567281P
P channel Mosfet

P channel Mosfet

Supplier's Site
MOSFETs - 2567281 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567281
MOSFETs 2567281
P channel Mosfet

P channel Mosfet

Supplier's Site
MOSFETs - 2567280 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567280
MOSFETs 2567280
P channel Mosfet

P channel Mosfet

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF9Z34SPBF
MOSFET IRF9Z34SPBF
MOSFET P-Chan 60V 18 Amp

MOSFET P-Chan 60V 18 Amp

Buy Now Datasheet
P Channel Mosfet, -60V, 18A, D2-Pak; Channel Type Vishay - 58K5791 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -60V, 18A, D2-Pak; Channel Type Vishay
58K5791
P Channel Mosfet, -60V, 18A, D2-Pak; Channel Type Vishay 58K5791
P CHANNEL MOSFET, -60V, 18A, D2-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

P CHANNEL MOSFET, -60V, 18A, D2-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z34SPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9Z34SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9Z34SPBF
MOSFET P-CH 60V 18A D2PAK

MOSFET P-CH 60V 18A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) RS Components, Ltd. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 128424-IRF9Z34SPBF IRF9Z34SPBF-ND IRF9Z34SPBF 2567281P IRF9Z34SPBF 58K5791 IRF9Z34SPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34SPBF Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs MOSFET P Channel Mosfet, -60V, 18A, D2-Pak; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 60 volts 60 volts
PD 3700 to 88000 milliwatts 3700 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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