P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
P-Channel MOSFET, 60V, 18A, 140mR RdsOn, D2PAK Product overview: IRF9Z34SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z34SPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 128424-IRF9Z34SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
MOSFET P-CH 60V 18A D2PAK
MOSFET P-CH 60V 18A D2PAK
P CHANNEL MOSFET, -60V, 18A, D2-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF9Z34SPBF-ND | 2567281P | 278-IRF9Z34SPBF | 128424-IRF9Z34SPBF | IRF9Z34SPBF | IRF9Z34SPBF | 58K5791 | IRF9Z34SPBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | P-Channel 60V 18A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34SPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | P Channel Mosfet, -60V, 18A, D2-Pak; Channel Type Vishay | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-252 (DPAK); TO-252 | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | ||
| PD | 3700 milliwatts | 3700 to 88000 milliwatts | 3700 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
