Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF9Z34

Description
P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF9Z34-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9Z34-ND
Single FETs, MOSFETs IRF9Z34-ND
P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB

P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Electronic Surplus - IRF9Z34 - 1187479-IRF9Z34 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IRF9Z34
1187479-IRF9Z34
Electronic Surplus - IRF9Z34 1187479-IRF9Z34
Manufacturer: Vishay Siliconix Win Source Part Number: 1187479-IRF9Z34 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 88W Alternative Parts (Cross-Reference): IRF9Z34NPBF; IRF9Z34PBF; STP10P6F6; Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 140mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 34nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1100pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187479-IRF9Z34
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 88W
Alternative Parts (Cross-Reference): IRF9Z34NPBF; IRF9Z34PBF; STP10P6F6;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 140mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 34nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1100pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z34 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9Z34
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9Z34
MOSFET P-CH 60V 18A TO220AB

MOSFET P-CH 60V 18A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number IRF9Z34-ND 1187479-IRF9Z34 IRF9Z34
Product Name Single FETs, MOSFETs Electronic Surplus - IRF9Z34 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
V(BR)DSS 60 volts
QG 34 nC
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