P-Channel 50V 18A (Tc) 74W (Tc) Through Hole TO-220AB
P-CH MOSFET, -50V, 18A, 140mR, TO-220AB Product overview: IRF9Z30PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -50V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z30PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1046799-IRF9Z30PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 140 mOhm @ 9.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
P channel ;VBRDSS -- V; RDSon -- mOhm
P channel ;VBRDSS -- V; RDSon -- mOhm
MOSFET P-CH 50V 18A TO220AB
P CHANNEL MOSFET, -50V, 18A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF9Z30PBF-ND | 278-IRF9Z30PBF | 1046799-IRF9Z30PBF | 1808845 | IRF9Z30PBF | IRF9Z30PBF | 19K8338 |
| Product Name | Single FETs, MOSFETs | -50V 18A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z30PBF | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -50V, 18A, To-220Ab; Channel Type Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220AB | TO-220; TO-220-3 | TO-3; TO-220 | ||
| PD | 74000 milliwatts | 74000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
