Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z30PBF IRF9Z30PBF

Description
Manufacturer: Vishay Win Source Part Number: 1046799-IRF9Z30PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 140 mOhm @ 9.3A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z30PBF - 1046799-IRF9Z30PBF - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 1808845 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1808311 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - IRF9Z30PBF-ND - DigiKey
    DigiKey
  • P Channel Mosfet, -50V, 18A, To-220Ab; Channel Type Vishay - 19K8338 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z30PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1046799-IRF9Z30PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 140 mOhm @ 9.3A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z30PBF - 1046799-IRF9Z30PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z30PBF
1046799-IRF9Z30PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z30PBF 1046799-IRF9Z30PBF
Manufacturer: Vishay Win Source Part Number: 1046799-IRF9Z30PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 140 mOhm @ 9.3A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1046799-IRF9Z30PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 140 mOhm @ 9.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 1808845 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808845
MOSFETs 1808845
P channel ;VBRDSS -- V; RDSon -- mOhm

P channel ;VBRDSS -- V; RDSon -- mOhm

Supplier's Site
MOSFETs - 1808311 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808311
MOSFETs 1808311
P channel ;VBRDSS -- V; RDSon -- mOhm

P channel ;VBRDSS -- V; RDSon -- mOhm

Supplier's Site
Single FETs, MOSFETs - IRF9Z30PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9Z30PBF-ND
Single FETs, MOSFETs IRF9Z30PBF-ND
P-Channel 50V 18A (Tc) 74W (Tc) Through Hole TO-220AB

P-Channel 50V 18A (Tc) 74W (Tc) Through Hole TO-220AB

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF9Z30PBF
MOSFET IRF9Z30PBF
MOSFET P-CH -60V HEXFET MOSFET

MOSFET P-CH -60V HEXFET MOSFET

Buy Now Datasheet
P Channel Mosfet, -50V, 18A, To-220Ab; Channel Type Vishay - 19K8338 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -50V, 18A, To-220Ab; Channel Type Vishay
19K8338
P Channel Mosfet, -50V, 18A, To-220Ab; Channel Type Vishay 19K8338
P CHANNEL MOSFET, -50V, 18A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

P CHANNEL MOSFET, -50V, 18A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z30PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9Z30PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9Z30PBF
MOSFET P-CH 50V 18A TO220AB

MOSFET P-CH 50V 18A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1046799-IRF9Z30PBF 1808845 IRF9Z30PBF-ND IRF9Z30PBF 19K8338 IRF9Z30PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z30PBF MOSFETs Single FETs, MOSFETs MOSFET P Channel Mosfet, -50V, 18A, To-220Ab; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 50 volts
PD 74000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor - QPD1025L - Qorvo
Qorvo
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
QPD1025L
Specs
Transistor Technology / Material 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type NI-1230 (Eared)
View Details
2 suppliers
GaAs Fet Switches - KCB815 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KCB815
Specs
Operating Frequency 6000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SC2814-5-TB-E - 855150-2SC2814-5-TB-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SC2814-5-TB-E
2SC2814-5-TB-E
Specs
Package Type SOT3
View Details
Single FETs, MOSFETs - AUIRF1404ZS-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AUIRF1404ZS
Specs
Polarity N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
View Details
5 suppliers