The IRF9Z24STRR is a P-channel power MOSFET from Vishay Siliconix, designed for surface mount applications in a D2PAK (TO-263) package. It features a maximum drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) rating of -11A at a case temperature of 25¬8C. The device exhibits a low on-resistance (R_DS(on)) of 0.28Oc at a gate-source voltage (V_GS) of -10V, making it suitable for high-efficiency applications. This MOSFET operates within a temperature range of -55¬8C to +175¬8C and is fully avalanche rated, providing reliability in demanding environments. The total gate charge (Q_g) is specified at a maximum of 19nC, which contributes to its fast switching capabilities. The IRF9Z24STRR is RoHS-compliant and is suitable for various applications requiring robust performance and thermal management. Engineers should consider this component for projects that require a reliable P-channel MOSFET with good thermal characteristics and low on-resistance.
Manufacturer: Vishay Siliconix
Win Source Part Number: 1187477-IRF9Z24STRR
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Family Name: IRF9Z24
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.7W, 60W
Alternative Parts (Cross-Reference): SFW2955TM; SFW9Z24TM; SPB08P06PGATMA1; SFW9Z24;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 11A
Rds On (Maximum) at Id, Vgs: 280mOhm at 6.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 570pF at 25V
P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)
MOSFET P-CH 60V 11A D2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors |
| Product Number | 1187477-IRF9Z24STRR | IRF9Z24STRR-ND | IRF9Z24STRR |
| Product Name | FETs - Single - IRF9Z24STRR | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | |
| V(BR)DSS | 60 volts | ||
| QG | 19 nC | ||
| PD | 3700 to 60000 milliwatts |
