Vishay Intertechnology, Inc. FETs - Single - IRF9Z14 IRF9Z14

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187468-IRF9Z14 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 43W Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 6.7A Rds On (Maximum) at Id, Vgs: 500mOhm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 12nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 270pF at 25V
  • FETs - Single - IRF9Z14 - 1187468-IRF9Z14 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF9Z14-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z14 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 16352517 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187468-IRF9Z14 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 43W Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 6.7A Rds On (Maximum) at Id, Vgs: 500mOhm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 12nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 270pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF9Z14 - 1187468-IRF9Z14 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF9Z14
1187468-IRF9Z14
FETs - Single - IRF9Z14 1187468-IRF9Z14
Manufacturer: Vishay Siliconix Win Source Part Number: 1187468-IRF9Z14 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 43W Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 6.7A Rds On (Maximum) at Id, Vgs: 500mOhm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 12nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 270pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187468-IRF9Z14
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 43W
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 6.7A
Rds On (Maximum) at Id, Vgs: 500mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 12nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 270pF at 25V

Buy Now
Single FETs, MOSFETs - IRF9Z14-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9Z14-ND
Single FETs, MOSFETs IRF9Z14-ND
P-Channel 60V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB

P-Channel 60V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
60V 6.7A MOSFET Transistor
278-IRF9Z14
60V 6.7A MOSFET Transistor 278-IRF9Z14
MOSFET P-CH 60V 6.7A TO220AB Product overview: IRF9Z14 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 6.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 6.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z14 can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 6.7A TO220AB Product overview: IRF9Z14 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 6.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 6.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z14 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z14 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9Z14
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9Z14
MOSFET P-CH 60V 6.7A TO220AB

MOSFET P-CH 60V 6.7A TO220AB

Supplier's Site
Transistor - 16352517 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16352517
Transistor 16352517
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 6.7A I(D), 60V, 0.5OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 6.7A I(D), 60V, 0.5OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 1187468-IRF9Z14 IRF9Z14-ND 278-IRF9Z14 IRF9Z14 16352517
Product Name FETs - Single - IRF9Z14 Single FETs, MOSFETs 60V 6.7A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 60 volts
QG 12 nC
PD 43000 milliwatts 43000 milliwatts
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