Vishay Intertechnology, Inc. FETs - Single - IRF9Z10 IRF9Z10

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187467-IRF9Z10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 43W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 6.7A Rds On (Maximum) at Id, Vgs: 500mOhm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 12nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 270pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187467-IRF9Z10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 43W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 6.7A Rds On (Maximum) at Id, Vgs: 500mOhm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 12nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 270pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF9Z10 - 1187467-IRF9Z10 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF9Z10
1187467-IRF9Z10
FETs - Single - IRF9Z10 1187467-IRF9Z10
Manufacturer: Vishay Siliconix Win Source Part Number: 1187467-IRF9Z10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 43W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 6.7A Rds On (Maximum) at Id, Vgs: 500mOhm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 12nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 270pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187467-IRF9Z10
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 43W
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 6.7A
Rds On (Maximum) at Id, Vgs: 500mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 12nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 270pF at 25V

Buy Now
Transistor - 67646087 - Radwell International
Willingboro, NJ, United States
Transistor
67646087
Transistor 67646087
TRANSISTOR, P-CHANNEL, 6.7 AMP, 60V, 0.5OHM, 43W, THROUGH HOLE, TO-220AB, ROHS NON-COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, P-CHANNEL, 6.7 AMP, 60V, 0.5OHM, 43W, THROUGH HOLE, TO-220AB, ROHS NON-COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
MOSFET P-CH 60V 6.7A TO220AB - 880-IRF9Z10 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 60V 6.7A TO220AB
880-IRF9Z10
MOSFET P-CH 60V 6.7A TO220AB 880-IRF9Z10
MOSFET P-CH 60V 6.7A TO220AB

MOSFET P-CH 60V 6.7A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
IRF9Z10
MOSFET IRF9Z10
MOSFET RECOMMENDED ALT 844-IRF9Z10PBF

MOSFET RECOMMENDED ALT 844-IRF9Z10PBF

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9Z10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9Z10
MOSFET P-CH 60V 6.7A TO220AB

MOSFET P-CH 60V 6.7A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187467-IRF9Z10 67646087 880-IRF9Z10 IRF9Z10 IRF9Z10
Product Name FETs - Single - IRF9Z10 Transistor MOSFET P-CH 60V 6.7A TO220AB MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 60 volts
QG 12 nC
PD 43000 milliwatts 43000 milliwatts
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