Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9630SPBF IRF9630SPBF

Description
Manufacturer: Vishay Win Source Part Number: 1046786-IRF9630SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 3.9A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9630SPBF - 1046786-IRF9630SPBF - Win Source Electronics
    Win Source Electronics
  • Transistor - 16352485 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRF9630SPBF-ND - DigiKey
    DigiKey
  • Mosfet, P-Ch, -200V, -6.5A, To-263Ab; Transistor Polarity Vishay - 01AC4892 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9630SPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1046786-IRF9630SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 3.9A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9630SPBF - 1046786-IRF9630SPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9630SPBF
1046786-IRF9630SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9630SPBF 1046786-IRF9630SPBF
Manufacturer: Vishay Win Source Part Number: 1046786-IRF9630SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 3.9A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1046786-IRF9630SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 6.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 3.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Transistor - 16352485 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16352485
Transistor 16352485
MOSFET, P-CH, -200V, -6.5A, TO-263AB, TRANSISTOR POLARITY:P CHANNEL, CONTINUOUS DRAIN CURRENT ID:-6.5A, DRAIN SOURCE VOLTAGE VDS:-200V, ON RESISTANCE RDS(ON):0.8OHM, RDS(ON) TEST VOLTAGE VGS:-10V, THRESHOLD VOLTAGE VGS:-4V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, P-CH, -200V, -6.5A, TO-263AB, TRANSISTOR POLARITY:P CHANNEL, CONTINUOUS DRAIN CURRENT ID:-6.5A, DRAIN SOURCE VOLTAGE VDS:-200V, ON RESISTANCE RDS(ON):0.8OHM, RDS(ON) TEST VOLTAGE VGS:-10V, THRESHOLD VOLTAGE VGS:-4V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRF9630SPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9630SPBF-ND
Single FETs, MOSFETs IRF9630SPBF-ND
P-Channel 200V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 200V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF9630SPBF
MOSFET IRF9630SPBF
MOSFET P-CH -200V HEXFET MOSFET

MOSFET P-CH -200V HEXFET MOSFET

Buy Now Datasheet
Mosfet, P-Ch, -200V, -6.5A, To-263Ab; Transistor Polarity Vishay - 01AC4892 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -200V, -6.5A, To-263Ab; Transistor Polarity Vishay
01AC4892
Mosfet, P-Ch, -200V, -6.5A, To-263Ab; Transistor Polarity Vishay 01AC4892
MOSFET, P-CH, -200V, -6.5A, TO-263AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.5A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes

MOSFET, P-CH, -200V, -6.5A, TO-263AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.5A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9630SPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9630SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9630SPBF
MOSFET P-CH 200V 6.5A D2PAK

MOSFET P-CH 200V 6.5A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1046786-IRF9630SPBF 16352485 IRF9630SPBF-ND IRF9630SPBF 01AC4892 IRF9630SPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9630SPBF Transistor Single FETs, MOSFETs MOSFET Mosfet, P-Ch, -200V, -6.5A, To-263Ab; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 200 volts
PD 3000 to 74000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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