MOSFET, P-CH, -200V, -6.5A, TO-263AB, TRANSISTOR POLARITY:P CHANNEL, CONTINUOUS DRAIN CURRENT ID:-6.5A, DRAIN SOURCE VOLTAGE VDS:-200V, ON RESISTANCE RDS(ON):0.8OHM, RDS(ON) TEST VOLTAGE VGS:-10V, THRESHOLD VOLTAGE VGS:-4V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
P-Channel 200V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Vishay
Win Source Part Number: 1046786-IRF9630SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 6.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 3.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 200V 6.5A D2PAK
MOSFET P-CH -200V HEXFET MOSFET
MOSFET, P-CH, -200V, -6.5A, TO-263AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.5A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes
| Radwell International | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 16352485 | IRF9630SPBF-ND | 1046786-IRF9630SPBF | IRF9630SPBF | IRF9630SPBF | 01AC4892 |
| Product Name | Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9630SPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -200V, -6.5A, To-263Ab; Transistor Polarity Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | ||
| V(BR)DSS | 200 volts | |||||
| PD | 3000 to 74000 milliwatts |
