Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF9620S

Description
P-Channel 200V 3.5A (Tc) 3W (Ta), 40W (Tc) Surface Mount D²PAK (TO-263)
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Description
P-Channel 200V 3.5A (Tc) 3W (Ta), 40W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF9620S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9620S-ND
Single FETs, MOSFETs IRF9620S-ND
P-Channel 200V 3.5A (Tc) 3W (Ta), 40W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 200V 3.5A (Tc) 3W (Ta), 40W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
FETs - Single - IRF9620S - 1187455-IRF9620S - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF9620S
1187455-IRF9620S
FETs - Single - IRF9620S 1187455-IRF9620S
Manufacturer: Vishay Siliconix Win Source Part Number: 1187455-IRF9620S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3W, 40W Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 3.5A Rds On (Maximum) at Id, Vgs: 1.5Ohm at 1.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 350pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187455-IRF9620S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3W, 40W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 3.5A
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 350pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9620S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9620S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9620S
MOSFET P-CH 200V 3.5A D2PAK

MOSFET P-CH 200V 3.5A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number IRF9620S-ND 1187455-IRF9620S IRF9620S
Product Name Single FETs, MOSFETs FETs - Single - IRF9620S Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 200 volts
QG 22 nC
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