Vishay Precision Group Single FETs, MOSFETs IRF9510STRLPBF

Description
P-Channel 100V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
P-Channel 100V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IRF9510STRLPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9510STRLPBFCT-ND
Single FETs, MOSFETs IRF9510STRLPBFCT-ND
P-Channel 100V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 100V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - IRF9510STRLPBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9510STRLPBFDKR-ND
Single FETs, MOSFETs IRF9510STRLPBFDKR-ND
P-Channel 100V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 100V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - IRF9510STRLPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9510STRLPBFTR-ND
Single FETs, MOSFETs IRF9510STRLPBFTR-ND
P-Channel 100V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 100V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9510STRLPBF - 015794-IRF9510STRLPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9510STRLPBF
015794-IRF9510STRLPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9510STRLPBF 015794-IRF9510STRLPBF
Manufacturer: Vishay Win Source Part Number: 015794-IRF9510STRLPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.7nC @ 10V Max Input Capacitance: 200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 2.4A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 015794-IRF9510STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.7nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 2.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
P-Channel SMD 100V 4A MOSFET Transistor
278-IRF9510STRLPBF
P-Channel SMD 100V 4A MOSFET Transistor 278-IRF9510STRLPBF
P-Channel MOSFET, 100V, 4A, 1.2R, Surface Mount Product overview: IRF9510STRLPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 100V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9510STRLPBF can be used for catalog matching and distributor lookup.

P-Channel MOSFET, 100V, 4A, 1.2R, Surface Mount Product overview: IRF9510STRLPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 100V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9510STRLPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, P Ch, -100V, -4A, To-263-3; Channel Type Vishay - 05W6874 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Ch, -100V, -4A, To-263-3; Channel Type Vishay
05W6874
Mosfet, P Ch, -100V, -4A, To-263-3; Channel Type Vishay 05W6874
MOSFET, P CH, -100V, -4A, TO-263-3; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, P CH, -100V, -4A, TO-263-3; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site Datasheet
P Channel Mosfet, -100V, 4A, D2-Pak, Full Reel; Channel Type Vishay - 58K5793 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -100V, 4A, D2-Pak, Full Reel; Channel Type Vishay
58K5793
P Channel Mosfet, -100V, 4A, D2-Pak, Full Reel; Channel Type Vishay 58K5793
P CHANNEL MOSFET, -100V, 4A, D2-PAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

P CHANNEL MOSFET, -100V, 4A, D2-PAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET P-Chan 100V 4.0 Amp

MOSFET P-Chan 100V 4.0 Amp

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9510STRLPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9510STRLPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9510STRLPBF
MOSFET P-CH 100V 4A D2PAK

MOSFET P-CH 100V 4A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF9510STRLPBFCT-ND 015794-IRF9510STRLPBF 278-IRF9510STRLPBF 05W6874 58K5793 IRF9510STRLPBF IRF9510STRLPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9510STRLPBF P-Channel SMD 100V 4A MOSFET Transistor Mosfet, P Ch, -100V, -4A, To-263-3; Channel Type Vishay P Channel Mosfet, -100V, 4A, D2-Pak, Full Reel; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-3; TO-263 TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 100 volts
PD 3700 to 43000 milliwatts 3700 milliwatts
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