Vishay Intertechnology, Inc. FETs - Single - IRF9510S IRF9510S

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187433-IRF9510S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.7W, 43W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 4A Rds On (Maximum) at Id, Vgs: 1.2Ohm at 2.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.7nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 200pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187433-IRF9510S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.7W, 43W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 4A Rds On (Maximum) at Id, Vgs: 1.2Ohm at 2.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.7nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 200pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF9510S - 1187433-IRF9510S - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF9510S
1187433-IRF9510S
FETs - Single - IRF9510S 1187433-IRF9510S
Manufacturer: Vishay Siliconix Win Source Part Number: 1187433-IRF9510S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.7W, 43W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 4A Rds On (Maximum) at Id, Vgs: 1.2Ohm at 2.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.7nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 200pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187433-IRF9510S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.7W, 43W
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 4A
Rds On (Maximum) at Id, Vgs: 1.2Ohm at 2.4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.7nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 200pF at 25V

Buy Now
Single FETs, MOSFETs - IRF9510S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9510S-ND
Single FETs, MOSFETs IRF9510S-ND
P-Channel 100V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 100V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Integrated Circuits (ICs) - Transistors - MOSFETs - IRF9510S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
IRF9510S
Integrated Circuits (ICs) - Transistors - MOSFETs IRF9510S
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number 1187433-IRF9510S IRF9510S-ND IRF9510S
Product Name FETs - Single - IRF9510S Single FETs, MOSFETs Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 100 volts
QG 8.7 nC
PD 3700 to 43000 milliwatts
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