Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF840ASTRL

Description
N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF840ASTRL-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF840ASTRL-ND
Single FETs, MOSFETs IRF840ASTRL-ND
N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Electronic Surplus - IRF840ASTRL - 1187404-IRF840ASTRL - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IRF840ASTRL
1187404-IRF840ASTRL
Electronic Surplus - IRF840ASTRL 1187404-IRF840ASTRL
Manufacturer: Vishay Siliconix Win Source Part Number: 1187404-IRF840ASTRL Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 125W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 8A Rds On (Maximum) at Id, Vgs: 850mOhm at 4.8A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1018pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187404-IRF840ASTRL
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.1W, 125W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 8A
Rds On (Maximum) at Id, Vgs: 850mOhm at 4.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1018pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF840ASTRL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF840ASTRL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF840ASTRL
MOSFET N-CH 500V 8A D2PAK

MOSFET N-CH 500V 8A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number IRF840ASTRL-ND 1187404-IRF840ASTRL IRF840ASTRL
Product Name Single FETs, MOSFETs Electronic Surplus - IRF840ASTRL Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 +/- 30V
V(BR)DSS 500 volts
QG 38 nC
Unlock Full Specs
to access all available technical data

Similar Products

High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6851 - 2N6851 - Infineon Technologies AG
Specs
Polarity P-Channel; P
Package Type M-TO205-3
Packing Method Tray; TRAY
View Details
CSD18532Q5B 60-V, N-Channel NexFET? Power MOSFET - CSD18532Q5BT - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 60 volts
rDS(on) 0.0043 ohms
View Details
6 suppliers
Power MOSFETs - SuperFAP-E3 Model: FMI11N60E - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Specs
V(BR)DSS 600 volts
rDS(on) 0.7500 ohms
IDSS 11000 milliamps
View Details