N-Channel MOSFET, 500V, 8A, 0.85Ω, TO-262 Product overview: IRF840ALPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF840ALPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 069416-IRF840ALPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1018pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 850 mOhm @ 4.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Through Hole I2PAK
MOSFET N-CH 500V 8A I2PAK
MOSFET Transistor, N Channel, 8 A, 500 V, 850 mohm, 10 V RoHS Compliant: Yes
MOSFET N-CH 500V HEXFET MOSFET TO-26
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-262
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF840ALPBF | 069416-IRF840ALPBF | IRF840ALPBF-ND | IRF840ALPBF | 47Y0980 | IRF840ALPBF | 880-IRF840ALPBF |
| Product Name | N-Channel 500V 8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF840ALPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 8 A, 500 V, 850 Mohm, 10 V Rohs Compliant Vishay | MOSFET | Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-262 |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 3100 milliwatts | 3100 to 125000 milliwatts | 3100 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 500 volts |
