Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF830A

Description
MOSFET N-CH 500V 5A TO220AB
Request a Quote Datasheet
Description
MOSFET N-CH 500V 5A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF830A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF830A-ND
Single FETs, MOSFETs IRF830A-ND
MOSFET N-CH 500V 5A TO220AB

MOSFET N-CH 500V 5A TO220AB

Buy Now Datasheet
FETs - Single - IRF830A - 1187396-IRF830A - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF830A
1187396-IRF830A
FETs - Single - IRF830A 1187396-IRF830A
Manufacturer: Vishay Siliconix Win Source Part Number: 1187396-IRF830A Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 74W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 5A Rds On (Maximum) at Id, Vgs: 1.4Ohm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 24nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 620pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187396-IRF830A
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 74W
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 5A
Rds On (Maximum) at Id, Vgs: 1.4Ohm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 24nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 620pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF830A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF830A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF830A
MOSFET N-CH 500V 5A TO220AB

MOSFET N-CH 500V 5A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
IRF830A
MOSFET IRF830A
MOSFET RECOMMENDED ALT 844-IRF830APBF

MOSFET RECOMMENDED ALT 844-IRF830APBF

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF830A-ND 1187396-IRF830A IRF830A IRF830A
Product Name Single FETs, MOSFETs FETs - Single - IRF830A Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
V(BR)DSS 500 volts
QG 24 nC
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