Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF820

The IRF820 is an N-channel MOSFET designed for high-voltage switching applications, housed in a TO-220AB package. It has a drain-source voltage rating of 500 V, a continuous drain current of 2.5 A at 25 °C, and a maximum power dissipation of 50 W. The device features a maximum on-resistance of 3.0 Ω at V_GS = 10 V and is rated for repetitive avalanche current up to 2.5 A and single pulse avalanche energy of 210 mJ. It supports a junction temperature range of -55 °C to +150 °C and meets RoHS compliance for lead-free variants. The TO-220AB package offers low thermal resistance, making it suitable for commercial-industrial applications with power dissipation up to approximately 50 W.