Vishay Precision Group N Channel Mosfet, 400V, 5.5A To-220; Channel Type Vishay IRF730PBF.

Description
N CHANNEL MOSFET, 400V, 5.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
Description
N CHANNEL MOSFET, 400V, 5.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
Datasheet
Datasheet Summary
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The IRF730PBF is a silicon N-channel MOSFET in a TO-220AB package, designed for high-efficiency switching applications. It features a drain-source voltage rating of 400 V, a continuous drain current of 5.5 A at 25 °C, and a maximum on-state resistance of 1.0 Ω at a gate-source voltage of 10 V. The device supports repetitive avalanche operation with a repetitive avalanche energy of 7.4 mJ and a repetitive avalanche current of 5.5 A. It has a total gate charge of 38 nC, input capacitance of 700 pF, and a peak diode recovery dV/dt of 4.0 V/ns. The TO-220AB package has a junction-to-case thermal resistance of 1.7 °C/W and a maximum power dissipation of 74 W at 25 °C. The part is RoHS compliant and meets the AEC-Q200 standard for automotive applications.

Datasheet Summary
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The IRF730PBF is a silicon N-channel MOSFET in a TO-220AB package, designed for high-efficiency switching applications. It features a drain-source voltage rating of 400 V, a continuous drain current of 5.5 A at 25 °C, and a maximum on-state resistance of 1.0 Ω at a gate-source voltage of 10 V. The device supports repetitive avalanche operation with a repetitive avalanche energy of 7.4 mJ and a repetitive avalanche current of 5.5 A. It has a total gate charge of 38 nC, input capacitance of 700 pF, and a peak diode recovery dV/dt of 4.0 V/ns. The TO-220AB package has a junction-to-case thermal resistance of 1.7 °C/W and a maximum power dissipation of 74 W at 25 °C. The part is RoHS compliant and meets the AEC-Q200 standard for automotive applications.

Suppliers

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Description
Supplier Links
N Channel Mosfet, 400V, 5.5A To-220; Channel Type Vishay - 26AC0616 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 400V, 5.5A To-220; Channel Type Vishay
26AC0616
N Channel Mosfet, 400V, 5.5A To-220; Channel Type Vishay 26AC0616
N CHANNEL MOSFET, 400V, 5.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No

N CHANNEL MOSFET, 400V, 5.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 26AC0616
Product Name N Channel Mosfet, 400V, 5.5A To-220; Channel Type Vishay
Polarity N-Channel
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