The IRF730PBF is a silicon N-channel MOSFET in a TO-220AB package, designed for high-efficiency switching applications. It features a drain-source voltage rating of 400 V, a continuous drain current of 5.5 A at 25 °C, and a maximum on-state resistance of 1.0 Ω at a gate-source voltage of 10 V. The device supports repetitive avalanche operation with a repetitive avalanche energy of 7.4 mJ and a repetitive avalanche current of 5.5 A. It has a total gate charge of 38 nC, input capacitance of 700 pF, and a peak diode recovery dV/dt of 4.0 V/ns. The TO-220AB package has a junction-to-case thermal resistance of 1.7 °C/W and a maximum power dissipation of 74 W at 25 °C. The part is RoHS compliant and meets the AEC-Q200 standard for automotive applications.
N CHANNEL MOSFET, 400V, 5.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC0616 |
| Product Name | N Channel Mosfet, 400V, 5.5A To-220; Channel Type Vishay |
| Polarity | N-Channel |