Vishay Intertechnology, Inc. FETs - Single - IRF720 IRF720

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187170-IRF720 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.samsung.com/Prod ucts/Semiconductor Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 3.3A Rds On (Maximum) at Id, Vgs: 1.8Ohm at 2A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 20nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 410pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187170-IRF720 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.samsung.com/Prod ucts/Semiconductor Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 3.3A Rds On (Maximum) at Id, Vgs: 1.8Ohm at 2A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 20nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 410pF at 25V
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Suppliers

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Product
Description
Supplier Links
FETs - Single - IRF720 - 1187170-IRF720 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF720
1187170-IRF720
FETs - Single - IRF720 1187170-IRF720
Manufacturer: Vishay Siliconix Win Source Part Number: 1187170-IRF720 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.samsung.com/Prod ucts/Semiconductor Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 3.3A Rds On (Maximum) at Id, Vgs: 1.8Ohm at 2A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 20nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 410pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187170-IRF720
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.samsung.com/Products/Semiconductor
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 50W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 400V
Id - Continuous Drain Current: 3.3A
Rds On (Maximum) at Id, Vgs: 1.8Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 20nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 410pF at 25V

Buy Now
Single FETs, MOSFETs - IRF720-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF720-ND
Single FETs, MOSFETs IRF720-ND
N-Channel 400V 3.3A (Tc) 50W (Tc) Through Hole TO-220AB

N-Channel 400V 3.3A (Tc) 50W (Tc) Through Hole TO-220AB

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Technical Specifications

  Win Source Electronics DigiKey
Product Category Power MOSFET Transistors
Product Number 1187170-IRF720 IRF720-ND
Product Name FETs - Single - IRF720 Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 400 volts
QG 20 nC
PD 50000 milliwatts
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